Presentation | 2001/6/30 RESURF LDMOS Technologies for High Voltage Integrated Circuits Oh-Kyong Kwon, Mueng-Ryul Lee, Young-Sun Na, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The RESURF LDMOS devices have been most widely used in high voltage integrated circuits but they have a problem of channel-length variation because of their non-self-align process. This paper describes the RESURF technologies ranging from 20V to 250V, EDMOSFETs for elimination of the channel-length variation and the methods for enhancing the SOA performance. In addition, this paper also describes the display driver LSIs which have uniform output characteristics and have been developed using the 20V LDMOSFETs and the EDMOSFETs. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | RESURF / LDMOS / HVICs / Display driver LSIs |
Paper # | ED2001-103,SDM2001-110 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2001/6/30(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | RESURF LDMOS Technologies for High Voltage Integrated Circuits |
Sub Title (in English) | |
Keyword(1) | RESURF |
Keyword(2) | LDMOS |
Keyword(3) | HVICs |
Keyword(4) | Display driver LSIs |
1st Author's Name | Oh-Kyong Kwon |
1st Author's Affiliation | Div.of Electrical and Computer Engineering, Hanyang University() |
2nd Author's Name | Mueng-Ryul Lee |
2nd Author's Affiliation | Div.of Electrical and Computer Engineering, Hanyang University |
3rd Author's Name | Young-Sun Na |
3rd Author's Affiliation | Div.of Electrical and Computer Engineering, Hanyang University |
Date | 2001/6/30 |
Paper # | ED2001-103,SDM2001-110 |
Volume (vol) | vol.101 |
Number (no) | 165 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |