Presentation 2001/6/30
RESURF LDMOS Technologies for High Voltage Integrated Circuits
Oh-Kyong Kwon, Mueng-Ryul Lee, Young-Sun Na,
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Abstract(in English) The RESURF LDMOS devices have been most widely used in high voltage integrated circuits but they have a problem of channel-length variation because of their non-self-align process. This paper describes the RESURF technologies ranging from 20V to 250V, EDMOSFETs for elimination of the channel-length variation and the methods for enhancing the SOA performance. In addition, this paper also describes the display driver LSIs which have uniform output characteristics and have been developed using the 20V LDMOSFETs and the EDMOSFETs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) RESURF / LDMOS / HVICs / Display driver LSIs
Paper # ED2001-103,SDM2001-110
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Committee SDM
Conference Date 2001/6/30(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) RESURF LDMOS Technologies for High Voltage Integrated Circuits
Sub Title (in English)
Keyword(1) RESURF
Keyword(2) LDMOS
Keyword(3) HVICs
Keyword(4) Display driver LSIs
1st Author's Name Oh-Kyong Kwon
1st Author's Affiliation Div.of Electrical and Computer Engineering, Hanyang University()
2nd Author's Name Mueng-Ryul Lee
2nd Author's Affiliation Div.of Electrical and Computer Engineering, Hanyang University
3rd Author's Name Young-Sun Na
3rd Author's Affiliation Div.of Electrical and Computer Engineering, Hanyang University
Date 2001/6/30
Paper # ED2001-103,SDM2001-110
Volume (vol) vol.101
Number (no) 165
Page pp.pp.-
#Pages 8
Date of Issue