Presentation | 2001/6/30 Performance analyses of GaAs PHEMT for phase difference in millimeter waves D. An, S.D. Lee, B.H. Lee, S.C. Kim, T.S. Kang, J.S. Kim, J.K. Rhee, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this paper, we have designed and fabricated pre-matched and bus type of gates and, then, carried out analyses of input return loss(IRL) and phase differences for millimeter waves. From analyses of phase differences of the excited signal at each gate electrode by momentum simulations, the PHEMT's with pre-matched gate have much smaller phase difference than ones with bus type gate. The IRL differences between the pre-matched and bus type gates with unit gate widths of 25, 40 and 50 um are 0.62±0.04, 0.52±0.08 and 0.49±0.05 dB, respectively. The overall improvements of IRL's for the pre-matched gate compared with bus type is 0.54±0.11 dB at 30 GHz. Also, the overall improvement of S_<21> gain for the pre-matched gate compared with bus type gate is 0.88 dB at 30 GHz. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | PHEMT / Phase difference / Input return loss(IRL) |
Paper # | ED2001-102,SDM2001-109 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2001/6/30(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Performance analyses of GaAs PHEMT for phase difference in millimeter waves |
Sub Title (in English) | |
Keyword(1) | PHEMT |
Keyword(2) | Phase difference |
Keyword(3) | Input return loss(IRL) |
1st Author's Name | D. An |
1st Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University() |
2nd Author's Name | S.D. Lee |
2nd Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University |
3rd Author's Name | B.H. Lee |
3rd Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University |
4th Author's Name | S.C. Kim |
4th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University |
5th Author's Name | T.S. Kang |
5th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University |
6th Author's Name | J.S. Kim |
6th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University |
7th Author's Name | J.K. Rhee |
7th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University |
Date | 2001/6/30 |
Paper # | ED2001-102,SDM2001-109 |
Volume (vol) | vol.101 |
Number (no) | 165 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |