Presentation 2001/6/30
Performance analyses of GaAs PHEMT for phase difference in millimeter waves
D. An, S.D. Lee, B.H. Lee, S.C. Kim, T.S. Kang, J.S. Kim, J.K. Rhee,
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Abstract(in English) In this paper, we have designed and fabricated pre-matched and bus type of gates and, then, carried out analyses of input return loss(IRL) and phase differences for millimeter waves. From analyses of phase differences of the excited signal at each gate electrode by momentum simulations, the PHEMT's with pre-matched gate have much smaller phase difference than ones with bus type gate. The IRL differences between the pre-matched and bus type gates with unit gate widths of 25, 40 and 50 um are 0.62±0.04, 0.52±0.08 and 0.49±0.05 dB, respectively. The overall improvements of IRL's for the pre-matched gate compared with bus type is 0.54±0.11 dB at 30 GHz. Also, the overall improvement of S_<21> gain for the pre-matched gate compared with bus type gate is 0.88 dB at 30 GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) PHEMT / Phase difference / Input return loss(IRL)
Paper # ED2001-102,SDM2001-109
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Committee SDM
Conference Date 2001/6/30(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Performance analyses of GaAs PHEMT for phase difference in millimeter waves
Sub Title (in English)
Keyword(1) PHEMT
Keyword(2) Phase difference
Keyword(3) Input return loss(IRL)
1st Author's Name D. An
1st Author's Affiliation Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University()
2nd Author's Name S.D. Lee
2nd Author's Affiliation Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University
3rd Author's Name B.H. Lee
3rd Author's Affiliation Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University
4th Author's Name S.C. Kim
4th Author's Affiliation Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University
5th Author's Name T.S. Kang
5th Author's Affiliation Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University
6th Author's Name J.S. Kim
6th Author's Affiliation Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University
7th Author's Name J.K. Rhee
7th Author's Affiliation Millimeter-wave INnovation Technology research center(MINT), Department of Electronics Engineering, Dongguk University
Date 2001/6/30
Paper # ED2001-102,SDM2001-109
Volume (vol) vol.101
Number (no) 165
Page pp.pp.-
#Pages 6
Date of Issue