| Presentation | 2001/6/30 Development of Si NMOS low-power Tx MMIC chipsets for 5.8 GHz wireless PDA applications Y.H. Chun, T.S. Kang, D. An, J.S. Kim, J.K. Rhee, H.M. Park, J.H. Jung, H.C. Park, Y.K. Seo, K.M. Song, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Tx MMIC chipsets based on 0.18 μm CMOS technology have been designed, fabricated, and tested. An up-converter chip was designed in a cascode structure with LO and IF frequencies of 5.5 GHz and 300 MHz, respectively. Measured results showed a conversion loss of 3.4 dB and a power consumption of 9 mW. A two-stage driver amplifier chip was designed with 16 × 10 μm NMOSFETs. This fabricated amplifier has an insertion gain of 8.7 dB at 6.8 GHz. Its P_<1dB> is 6.7 dBm, and a power consumption of 40 mW. It also has a noise figure of 5.0 dB at 6.8 GHz. The measured results were promising, showing high potential of this technology for the wireless PDA applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si-MMIC / CMOS / RF / NMOSFET / amplifier / up-converter / mixer / wireless PDA / 5.8 GHz |
| Paper # | ED2001-101,SDM2001-108 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/6/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of Si NMOS low-power Tx MMIC chipsets for 5.8 GHz wireless PDA applications |
| Sub Title (in English) | |
| Keyword(1) | Si-MMIC |
| Keyword(2) | CMOS |
| Keyword(3) | RF |
| Keyword(4) | NMOSFET |
| Keyword(5) | amplifier |
| Keyword(6) | up-converter |
| Keyword(7) | mixer |
| Keyword(8) | wireless PDA |
| Keyword(9) | 5.8 GHz |
| 1st Author's Name | Y.H. Chun |
| 1st Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Dongguk University() |
| 2nd Author's Name | T.S. Kang |
| 2nd Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Dongguk University |
| 3rd Author's Name | D. An |
| 3rd Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Dongguk University |
| 4th Author's Name | J.S. Kim |
| 4th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Dongguk University |
| 5th Author's Name | J.K. Rhee |
| 5th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Dongguk University |
| 6th Author's Name | H.M. Park |
| 6th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Dongguk University |
| 7th Author's Name | J.H. Jung |
| 7th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Dongguk University |
| 8th Author's Name | H.C. Park |
| 8th Author's Affiliation | Millimeter-wave INnovation Technology research center(MINT), Dongguk University |
| 9th Author's Name | Y.K. Seo |
| 9th Author's Affiliation | Samsung Advanced Institute of Technology(SAIT), MEMS laboratory |
| 10th Author's Name | K.M. Song |
| 10th Author's Affiliation | Samsung Advanced Institute of Technology(SAIT), MEMS laboratory |
| Date | 2001/6/30 |
| Paper # | ED2001-101,SDM2001-108 |
| Volume (vol) | vol.101 |
| Number (no) | 165 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |