| Presentation | 2001/6/30 Low-frequency noise characteristics of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As metamorphic high electron mobility transistors Jeong Hoon Kim, Jong-In Song, Hyung-Sup Yoon, Jin-Hee Lee, Woo Jin Chang, Jae Yup Shim, Kyung Ho Lee, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low-frequency noise characteristics of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As metamorphic high electron mobility transitors(MM-HEMTs) grown on a GaAs substrate are investigated. Dependence of low-frequency noise spectral density of the MM-HEMT having two 0.5x50 μm^2 gates on temperature(200K-400K)and gate and drain bias voltages is characterized for frequencies between 1 Hz to 53 kHz. The low-frequency input noise spectra of the MM-HEMT showed pure 1/f noise characteristics, indicating that there exist no deep trap effects for the temperature and the frequency ranges investigated. The MM-HEMT showed a very low noise spectral density(Hooge parameter: 3.7x10^<-5> frequency exponent: ～1.0)and a very small transconductance frequency dispersion(Δg_m/g_m<3%), which are comparable to the state-of-the-art InAlAs/InGaAs HEMTs grown on InP substrate. The results indicate a great potential of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As MM-HEMT grown on GaAs substrate for millimeter-wave circuit applications requiring low phase noise characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Metamorphic HEMT(MM-HEMT) / Low-frequency noise / transconductance frequency dispersion |
| Paper # | ED2001-99,SDM2001-106 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/6/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-frequency noise characteristics of In_<0.52>Al_<0.48>As/In_<0.60>Ga_<0.40>As metamorphic high electron mobility transistors |
| Sub Title (in English) | |
| Keyword(1) | Metamorphic HEMT(MM-HEMT) |
| Keyword(2) | Low-frequency noise |
| Keyword(3) | transconductance frequency dispersion |
| 1st Author's Name | Jeong Hoon Kim |
| 1st Author's Affiliation | Dept.of Information and Communications, K-JIST() |
| 2nd Author's Name | Jong-In Song |
| 2nd Author's Affiliation | Dept.of Information and Communications, K-JIST |
| 3rd Author's Name | Hyung-Sup Yoon |
| 3rd Author's Affiliation | Microwave Devices Team, ETRI |
| 4th Author's Name | Jin-Hee Lee |
| 4th Author's Affiliation | Microwave Devices Team, ETRI |
| 5th Author's Name | Woo Jin Chang |
| 5th Author's Affiliation | Microwave Devices Team, ETRI |
| 6th Author's Name | Jae Yup Shim |
| 6th Author's Affiliation | Microwave Devices Team, ETRI |
| 7th Author's Name | Kyung Ho Lee |
| 7th Author's Affiliation | Microwave Devices Team, ETRI |
| Date | 2001/6/30 |
| Paper # | ED2001-99,SDM2001-106 |
| Volume (vol) | vol.101 |
| Number (no) | 165 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |