Presentation	2001/6/30 Characterization of Temperature Dependence of High-Frequency Performance of AlGaN/GaN HEMTs Takashi Mizutani, Mitsutoshi Akita, Shigeru Kishimoto,
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Abstract(in English)	High-frequency performance of the 1.3-μm-long-gate AlGaN/GaN HEMTs have been evaluated by S-parameter measurements at temperatures between 23 and 187℃. The cutoff frequency f_T decreased monotonically with increase in temperature. It was 13.7 and 8.7 GHz at 23 and 187℃, respectively. The effective electron velocities v_ in the channel evaluated by the total delay time analysis were 1.2 and 0.8 x 10^7 cm/s at 23 and 187℃, respectively. It has been shown that the temperature dependence of f_T is dominated by that of v_. The smaller effective electron velocity and its larger temperature dependence than the peak velocity obtained by Monte Carlo simulation was explained by the smaller electric field in the channel than the peak field.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	AlGaN/GaN HEMT / temperature dependence / high-frequency performance / electron velocity
Paper #	ED2001-98,SDM2001-105
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Conference Information
Committee	SDM
Conference Date	2001/6/30(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Characterization of Temperature Dependence of High-Frequency Performance of AlGaN/GaN HEMTs
Sub Title (in English)
Keyword(1)	AlGaN/GaN HEMT
Keyword(2)	temperature dependence
Keyword(3)	high-frequency performance
Keyword(4)	electron velocity
1st Author's Name	Takashi Mizutani
1st Author's Affiliation	Department of Quantum Engineering, Nagoya University()
2nd Author's Name	Mitsutoshi Akita
2nd Author's Affiliation	Department of Quantum Engineering, Nagoya University
3rd Author's Name	Shigeru Kishimoto
3rd Author's Affiliation	Department of Quantum Engineering, Nagoya University
Date	2001/6/30
Paper #	ED2001-98,SDM2001-105
Volume (vol)	vol.101
Number (no)	165
Page	pp.pp.-
#Pages	5
Date of Issue