| Presentation | 2001/6/30 Microwave Power Performance of AlGaN/GaN Heterojunction FETs M. Kuzuhara, N. Hayama, Y. Ando, K. Kunihiro, K. Kasahara, Y. Okamoto, K. Matsunaga, T. Nakayama, Y. Ohno, H. Miyamoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Microwave power performance of an AlGaN/GaN heterojunction FET fabricated on a sapphire substrate is described. Device fabrication processes, including mechanical thinning technique of the substrate, are presented. The fabricated power AlGaN/GaN FET with a thinned sapphire substrate down to 50μm exhibited no trace of degradation in the device performance and delivered an output power of 13.9W with a power-added efficiency of 28.4% at 1.95GHz. The results of a full-band ensemble Monte Carlo simulation predicted a current gain cutoff frequency of 170GHz and a power density of 26W/mm with a gate length of 0.1μm. The prospects of millimeter-wave high-power applications will be discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / heterojunction / FET / Power device / Sapphire substrate |
| Paper # | ED2001-96,SDM2001-103 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/6/30(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Microwave Power Performance of AlGaN/GaN Heterojunction FETs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | heterojunction |
| Keyword(3) | FET |
| Keyword(4) | Power device |
| Keyword(5) | Sapphire substrate |
| 1st Author's Name | M. Kuzuhara |
| 1st Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation() |
| 2nd Author's Name | N. Hayama |
| 2nd Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| 3rd Author's Name | Y. Ando |
| 3rd Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| 4th Author's Name | K. Kunihiro |
| 4th Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| 5th Author's Name | K. Kasahara |
| 5th Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| 6th Author's Name | Y. Okamoto |
| 6th Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| 7th Author's Name | K. Matsunaga |
| 7th Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| 8th Author's Name | T. Nakayama |
| 8th Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| 9th Author's Name | Y. Ohno |
| 9th Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| 10th Author's Name | H. Miyamoto |
| 10th Author's Affiliation | Photonic and Wireless Devices Research laboratories, NEC Corporation |
| Date | 2001/6/30 |
| Paper # | ED2001-96,SDM2001-103 |
| Volume (vol) | vol.101 |
| Number (no) | 165 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |