Presentation 2001/6/30
The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
Yasuro Yamane, Takatomo Enoki, Koichi Murata, Yohtaro Umeda, Yoshino K. Fukai, Suehiro Sugitani, Hiroto Kitabayashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The InP-HEMT IC technology is outlined. This technology realize the integration of 0.1 um gate length HEMTs, vertical diodes, capacitors and WSiN resistors with two level interconnections. The InP-HEMT degradation mode is investigated. The increase in Rd is the critical condition for 100 C use. InAlP-CSL(carrier supply layer)-HEMTs have 100 times longer lifetime than the usual InAlAs-CSL-HEMTs. This HEMT lifetime is 10^7 hours at 100 C. This technology realizes 43 Gbit/s operating SSIs and MSIs with practical yield, successfully.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) compound semiconductor / InP / InAlP / InAlAs / GaInAs / IC / HEMT
Paper # ED2001-95,SDM2001-102
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Conference Information
Committee SDM
Conference Date 2001/6/30(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
Sub Title (in English)
Keyword(1) compound semiconductor
Keyword(2) InP
Keyword(3) InAlP
Keyword(4) InAlAs
Keyword(5) GaInAs
Keyword(6) IC
Keyword(7) HEMT
1st Author's Name Yasuro Yamane
1st Author's Affiliation NTT Photonics Laboratories()
2nd Author's Name Takatomo Enoki
2nd Author's Affiliation NTT Photonics Laboratories
3rd Author's Name Koichi Murata
3rd Author's Affiliation NTT Photonics Laboratories
4th Author's Name Yohtaro Umeda
4th Author's Affiliation NTT Photonics Laboratories
5th Author's Name Yoshino K. Fukai
5th Author's Affiliation NTT Photonics Laboratories
6th Author's Name Suehiro Sugitani
6th Author's Affiliation NTT Photonics Laboratories
7th Author's Name Hiroto Kitabayashi
7th Author's Affiliation NTT Photonics Laboratories
Date 2001/6/30
Paper # ED2001-95,SDM2001-102
Volume (vol) vol.101
Number (no) 165
Page pp.pp.-
#Pages 8
Date of Issue