| Presentation | 2001/6/28 A Thorough Study of Thin Gate Oxide Degradation during Fabrication of Advanced CMOSFET's Jae-Sung Lee, Heui-Gyun Ahn, Won-Gyu Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This study is focused on the analytical method to analyze the degradation of gate oxide integrity. The current components of p-MOSFET's were measured with carrier separation method. For comprehensive understanding, we used three kinds of devices, which are the fresh, the stressed, and the damaged devices. With the information for composition of gate current, the location of the damage layer in gate oxide can be deduced. In our device, valence hole tunneling current is the dominant component of gate current in inversion mode, which implies the damage region was generated near polysilicon/SiO_2 interface. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gate oxide degradation / carrier separation method / valence hole tunneling current |
| Paper # | ED2001-63,SDM2001-70 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/6/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Thorough Study of Thin Gate Oxide Degradation during Fabrication of Advanced CMOSFET's |
| Sub Title (in English) | |
| Keyword(1) | Gate oxide degradation |
| Keyword(2) | carrier separation method |
| Keyword(3) | valence hole tunneling current |
| 1st Author's Name | Jae-Sung Lee |
| 1st Author's Affiliation | Dept.of Computer & Communication Eng.Uiduk University() |
| 2nd Author's Name | Heui-Gyun Ahn |
| 2nd Author's Affiliation | System IC R&D Lab. |
| 3rd Author's Name | Won-Gyu Lee |
| 3rd Author's Affiliation | System IC R&D Lab. |
| Date | 2001/6/28 |
| Paper # | ED2001-63,SDM2001-70 |
| Volume (vol) | vol.101 |
| Number (no) | 163 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |