Presentation 2001/4/13
A High Performance TFT and its Subject
Takashi NOGUCHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) TFT performance and relating subject are discussed from a viewpoint of device structure, material and fabrication process. Crystallized Si TFTs are applied not only to stacked SRAMs but also to displays such as LCD or ELD etc. by adopting a technique such as SPC or ELA. Although the improvement of device characteristics such as an enhancement of carrier mobility or a reduction of leakage current are under going, issues such as a uniformity of the device characteristics become more important relating to the reduction of driving voltage or the shrinkage of device size. The improvement of TFTs, a proposal for attaining the uniformity, relating fundamental result and/or its possibility are described. By settling the issues, coming SOP era using TFTs should be expected.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TFT / polySi / LCD / ELD / SPC / ELA / SOP
Paper # ED2001-11,SDM2001-11
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Conference Information
Committee SDM
Conference Date 2001/4/13(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A High Performance TFT and its Subject
Sub Title (in English)
Keyword(1) TFT
Keyword(2) polySi
Keyword(3) LCD
Keyword(4) ELD
Keyword(5) SPC
Keyword(6) ELA
Keyword(7) SOP
1st Author's Name Takashi NOGUCHI
1st Author's Affiliation ()
Date 2001/4/13
Paper # ED2001-11,SDM2001-11
Volume (vol) vol.101
Number (no) 17
Page pp.pp.-
#Pages 6
Date of Issue