Presentation | 2001/4/12 Thin-Film Transistors Fabricated by Catalytic Chemical Vapor Deposition Method Masahiro Sakai, Takayuki Tsutsumi, Atsushi Masuda, Hideki Matsumura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed amorphous silicon thin-film transistors (TFT's) by the catalytic chemical vapor deposition (Cat-CVD) method. The amorphous silicon films deposited at a high rate (1.9 nm s^<-1>) show low spin density (1.6×10^<16>cm^<-3>) measured by electron spin resonance. TFT's, with a field effect mobility about 0.85 cm^2V^<-1>s^<-1>, are obtained with the gate SiN_x and phosphorous-doped amorphous silicon layers also fabricated by Cat-CVD even when the TFT's are fabricated by back channel etching process. The bias stress test has been performed on the TFT samples with SiO_2 as gate dielectric. The stress tolerance is very high, showing that the TFT's are suitable for operating the organic electroluminescence displays. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | catalytic CVD (Cat-CVD, hot-wire CVD) / amorphous silicon / high rate deposition / thin-film transistor |
Paper # | ED2001-5,SDM2001-5 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2001/4/12(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Thin-Film Transistors Fabricated by Catalytic Chemical Vapor Deposition Method |
Sub Title (in English) | |
Keyword(1) | catalytic CVD (Cat-CVD, hot-wire CVD) |
Keyword(2) | amorphous silicon |
Keyword(3) | high rate deposition |
Keyword(4) | thin-film transistor |
1st Author's Name | Masahiro Sakai |
1st Author's Affiliation | JAIST(Japan Advanced Institute of Science and Technology)() |
2nd Author's Name | Takayuki Tsutsumi |
2nd Author's Affiliation | JAIST(Japan Advanced Institute of Science and Technology) |
3rd Author's Name | Atsushi Masuda |
3rd Author's Affiliation | JAIST(Japan Advanced Institute of Science and Technology) |
4th Author's Name | Hideki Matsumura |
4th Author's Affiliation | JAIST(Japan Advanced Institute of Science and Technology) |
Date | 2001/4/12 |
Paper # | ED2001-5,SDM2001-5 |
Volume (vol) | vol.101 |
Number (no) | 16 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |