Presentation 2001/4/12
Thin-Film Transistors Fabricated by Catalytic Chemical Vapor Deposition Method
Masahiro Sakai, Takayuki Tsutsumi, Atsushi Masuda, Hideki Matsumura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have developed amorphous silicon thin-film transistors (TFT's) by the catalytic chemical vapor deposition (Cat-CVD) method. The amorphous silicon films deposited at a high rate (1.9 nm s^<-1>) show low spin density (1.6×10^<16>cm^<-3>) measured by electron spin resonance. TFT's, with a field effect mobility about 0.85 cm^2V^<-1>s^<-1>, are obtained with the gate SiN_x and phosphorous-doped amorphous silicon layers also fabricated by Cat-CVD even when the TFT's are fabricated by back channel etching process. The bias stress test has been performed on the TFT samples with SiO_2 as gate dielectric. The stress tolerance is very high, showing that the TFT's are suitable for operating the organic electroluminescence displays.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) catalytic CVD (Cat-CVD, hot-wire CVD) / amorphous silicon / high rate deposition / thin-film transistor
Paper # ED2001-5,SDM2001-5
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Conference Information
Committee SDM
Conference Date 2001/4/12(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thin-Film Transistors Fabricated by Catalytic Chemical Vapor Deposition Method
Sub Title (in English)
Keyword(1) catalytic CVD (Cat-CVD, hot-wire CVD)
Keyword(2) amorphous silicon
Keyword(3) high rate deposition
Keyword(4) thin-film transistor
1st Author's Name Masahiro Sakai
1st Author's Affiliation JAIST(Japan Advanced Institute of Science and Technology)()
2nd Author's Name Takayuki Tsutsumi
2nd Author's Affiliation JAIST(Japan Advanced Institute of Science and Technology)
3rd Author's Name Atsushi Masuda
3rd Author's Affiliation JAIST(Japan Advanced Institute of Science and Technology)
4th Author's Name Hideki Matsumura
4th Author's Affiliation JAIST(Japan Advanced Institute of Science and Technology)
Date 2001/4/12
Paper # ED2001-5,SDM2001-5
Volume (vol) vol.101
Number (no) 16
Page pp.pp.-
#Pages 5
Date of Issue