Presentation | 2001/5/18 Fabrication and characterization of Si quantum well structures Takuma Ishihara, Masanori Iwasaki, Toshiaki Tsuchiya, Yasuhiko Ishikawa, Michiharu Tabe, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Ultrathin Si/SiO_2 double barrier structures were fabricated using a silicon-on-insulator (SOI) wafer with an ultrathin thermally-grown buried SiO_2 layer, which was fabricated in our laboratory by a wafer bonding technique. I-V measurements for a sample with ~5nm-thick Si showed monotonous increase of the current with increasing the applied voltage, while, for a sample with ~2nm-thick Si, several inflections were observed in the I-V curves. A negative differential resistance was also observed, suggesting the resonant tunneling of electrons through the ultrathin Si layer. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Si / SiO_2 / SOI / double barrier structure / negative differential resistance / resonant tunneling |
Paper # | ED2001-43,CPM2001-30,SDM2001-43 |
Date of Issue |
Conference Information | |
Committee | SDM |
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Conference Date | 2001/5/18(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication and characterization of Si quantum well structures |
Sub Title (in English) | |
Keyword(1) | Si |
Keyword(2) | SiO_2 |
Keyword(3) | SOI |
Keyword(4) | double barrier structure |
Keyword(5) | negative differential resistance |
Keyword(6) | resonant tunneling |
1st Author's Name | Takuma Ishihara |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
2nd Author's Name | Masanori Iwasaki |
2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
3rd Author's Name | Toshiaki Tsuchiya |
3rd Author's Affiliation | Shimane University |
4th Author's Name | Yasuhiko Ishikawa |
4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
5th Author's Name | Michiharu Tabe |
5th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
Date | 2001/5/18 |
Paper # | ED2001-43,CPM2001-30,SDM2001-43 |
Volume (vol) | vol.101 |
Number (no) | 83 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |