| Presentation | 2001/5/18 Dependence of Mechanism for Si SET with Oxidation-Induced Strain and Quantum-Mechanical Size Effect on Conduction Direction Seiji Horiguchi, Masao Nagase, Kenji Shiraishi, Hiroyuki Kageshima, Yasuo Takahashi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the conduction-direction dependence of the mechanism for Si SET with the oxidation-induced strain and the quantum-mechanical size effect, using the first-principles calculation, the deformation potential and the effective potential method. In this mechanism, the reduction of geometric structure in a wire region produces a tunnel barrier through the quantum-mechanical size effect, while the compressive stress generated during oxidation in the wire region forms a potential well corresponding to an island in the tunnel barrier through the bandgap reduction due to strain. It has been shown that the SET can operate with the same mechanism in the arbitrary conduction direction in the (001) plane as well as [110] direction previously reported. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si SET / PADOX / strain effect / operation mechanism / conduction-directiondependence |
| Paper # | ED2001-42,CPM2001-29,SDM2001-42 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/5/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of Mechanism for Si SET with Oxidation-Induced Strain and Quantum-Mechanical Size Effect on Conduction Direction |
| Sub Title (in English) | |
| Keyword(1) | Si SET |
| Keyword(2) | PADOX |
| Keyword(3) | strain effect |
| Keyword(4) | operation mechanism |
| Keyword(5) | conduction-directiondependence |
| 1st Author's Name | Seiji Horiguchi |
| 1st Author's Affiliation | NTT Basic Research Laboratories() |
| 2nd Author's Name | Masao Nagase |
| 2nd Author's Affiliation | NTT Basic Research Laboratories |
| 3rd Author's Name | Kenji Shiraishi |
| 3rd Author's Affiliation | NTT Basic Research Laboratories:(Present address) Institute of Physics, University of Tsukuba |
| 4th Author's Name | Hiroyuki Kageshima |
| 4th Author's Affiliation | NTT Basic Research Laboratories |
| 5th Author's Name | Yasuo Takahashi |
| 5th Author's Affiliation | NTT Basic Research Laboratories |
| Date | 2001/5/18 |
| Paper # | ED2001-42,CPM2001-29,SDM2001-42 |
| Volume (vol) | vol.101 |
| Number (no) | 83 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |