Presentation	2001/5/18 Low frequency noise in Si_<1-x>Ge_x-channel pMOSFETs and its correlation with Si_<1-x>Ge_x/Si heterostructure quality T. Tsuchiya, T. Matsuura, J. Murota,
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Abstract(in English)	Low frequency noise (LFN) in Si_<1-x>Ge_x-channel pMOSFETs with a relatively wide range of Ge fraction x=0.2, 0.5, 0.7, and Si_<1-x>Ge_x thickness d_=2-14 nm are investigated, and it is shown that LFN in Si_<1-x>Ge_x pMOSFETs can be lower than that in conventional Si pMOSFETs. Moreover, it is shown that the quality of Si_<1-x>Ge_x/Si heterostructure can be evaluated by the LFN characteristics under an appropriate bias condition, and that the noise well corresponds to the behavior of the maximum transconductance.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	SiGe / MOSFET / SiGe/Si heterostructure / low frequency noise
Paper #	ED2001-41,CPM2001-28,SDM2001-41
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Committee	SDM
Conference Date	2001/5/18(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Low frequency noise in Si_<1-x>Ge_x-channel pMOSFETs and its correlation with Si_<1-x>Ge_x/Si heterostructure quality
Sub Title (in English)
Keyword(1)	SiGe
Keyword(2)	MOSFET
Keyword(3)	SiGe/Si heterostructure
Keyword(4)	low frequency noise
1st Author's Name	T. Tsuchiya
1st Author's Affiliation	Interdisciplinary Faculty of Science and Engineering, Shimane University()
2nd Author's Name	T. Matsuura
2nd Author's Affiliation	Research Institute of Electrical Communication, Tohoku University
3rd Author's Name	J. Murota
3rd Author's Affiliation	Research Institute of Electrical Communication, Tohoku University
Date	2001/5/18
Paper #	ED2001-41,CPM2001-28,SDM2001-41
Volume (vol)	vol.101
Number (no)	83
Page	pp.pp.-
#Pages	5
Date of Issue