Presentation 2001/5/18
Estimation of structure simulation in order to control the short channel effect in NMOSFET
Tadaoki Yamamoto, Keigo Nakasima, Kazuyuki Sibata, Hideo Uchida, Masaya Ichimura, Eisuke Arai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We tried to obtain the device parameters to control the short channel effect for MOSFETs with the elevated source/drain structure and counter doping structure using device simulator. For the elevated structure, the decrease of drain current is observed but is improved by adding the halo structure. For the counter doping structure, we can control the short channel effect for any threshold voltage. For reduction of device dimension in future, the counter doping structure is superior to the elevated one since it has the wide control range of threshold voltage.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) elevated source and drain / counter doping / short channel effect / simulation / halo structure
Paper # ED2001-40,CPM2001-27,SDM2001-40
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Committee SDM
Conference Date 2001/5/18(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Estimation of structure simulation in order to control the short channel effect in NMOSFET
Sub Title (in English)
Keyword(1) elevated source and drain
Keyword(2) counter doping
Keyword(3) short channel effect
Keyword(4) simulation
Keyword(5) halo structure
1st Author's Name Tadaoki Yamamoto
1st Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology()
2nd Author's Name Keigo Nakasima
2nd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
3rd Author's Name Kazuyuki Sibata
3rd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
4th Author's Name Hideo Uchida
4th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
5th Author's Name Masaya Ichimura
5th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
6th Author's Name Eisuke Arai
6th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 2001/5/18
Paper # ED2001-40,CPM2001-27,SDM2001-40
Volume (vol) vol.101
Number (no) 83
Page pp.pp.-
#Pages 6
Date of Issue