| Presentation | 2001/5/18 Investigation of Plasma induced damage on CMOS-ICs using atmospheric plasma cleaningequipment Nobuyuki Takakura, Takuji Keno, Masaharu Yasuda, Yasushi Sawada, Yoshitami Inoue, Kenji Taniguchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Plasma induced damage on CMOS-ICs using atmospheric plasma cleaning equipment was investigated, which was carried out by using MOS Tr TEG (Test Element Group) with gate oxide thickness 3nm-100nm. MOS Tr characteristics such as threshold voltage, subthreshold swing, breakdown voltage, Qbd life time have been measured. The measured data for the irradiated and non-irradiated samples clearly demonstrated that the plasma induced damage depends on gate oxide thickness and anntena ratio as well. We report the degradation mechanism behind the experimental data. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | atmospheric plasma cleaning equipment / damage / TEG / oxide thickness / anntena ratio |
| Paper # | ED2001-36,CPM2001-23,SDM2001-36 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/5/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of Plasma induced damage on CMOS-ICs using atmospheric plasma cleaningequipment |
| Sub Title (in English) | |
| Keyword(1) | atmospheric plasma cleaning equipment |
| Keyword(2) | damage |
| Keyword(3) | TEG |
| Keyword(4) | oxide thickness |
| Keyword(5) | anntena ratio |
| 1st Author's Name | Nobuyuki Takakura |
| 1st Author's Affiliation | Semicondcter Technology Reserch Laboratory, Matsushita Electric Works Ltd.() |
| 2nd Author's Name | Takuji Keno |
| 2nd Author's Affiliation | Semicondcter Technology Reserch Laboratory, Matsushita Electric Works Ltd. |
| 3rd Author's Name | Masaharu Yasuda |
| 3rd Author's Affiliation | Semicondcter Technology Reserch Laboratory, Matsushita Electric Works Ltd. |
| 4th Author's Name | Yasushi Sawada |
| 4th Author's Affiliation | Automation Controls Technology Development Laboratory, Matsushita Electric Works Ltd. |
| 5th Author's Name | Yoshitami Inoue |
| 5th Author's Affiliation | Matsusita Electric Works Machine & Vision Ltd. |
| 6th Author's Name | Kenji Taniguchi |
| 6th Author's Affiliation | Department of Electronics and information systems, Osaka university |
| Date | 2001/5/18 |
| Paper # | ED2001-36,CPM2001-23,SDM2001-36 |
| Volume (vol) | vol.101 |
| Number (no) | 83 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |