| Presentation | 2001/5/18 Influence on Schottky contacts of sacrificial anodic oxidation for 6H-SiC Masashi Kato, Masaya Ichimura, Eisuke Arai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We attemped to form oxide films on n-type 6H-SiC by an anodic oxidation method. As electrolyte, mixed solution of ethylene-glycol, water and KNO_3 was employed. Anodic oxide was formed on 6H-SiC by appling voltage to 6H-SiC. The oxide was not pure SiO_2 but it was etched by HF. Formation rate of the anodic oxide was much higher than typical thermal oxidation rate for 6H-SiC. Schottky contacts were formed on the oxide-etched surface. Then we investigated influence of sacrificial anodic oxidation on Schottky contacts and we found influence similar to that of the sacrificail thermal oxidation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 6H-SiC / anodic oxidation / sacrificial oxidation / Schottky contact |
| Paper # | ED2001-32,CPM2001-19,SDM2001-32 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/5/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence on Schottky contacts of sacrificial anodic oxidation for 6H-SiC |
| Sub Title (in English) | |
| Keyword(1) | 6H-SiC |
| Keyword(2) | anodic oxidation |
| Keyword(3) | sacrificial oxidation |
| Keyword(4) | Schottky contact |
| 1st Author's Name | Masashi Kato |
| 1st Author's Affiliation | Nagoya Institute of Technology() |
| 2nd Author's Name | Masaya Ichimura |
| 2nd Author's Affiliation | Nagoya Institute of Technology |
| 3rd Author's Name | Eisuke Arai |
| 3rd Author's Affiliation | Nagoya Institute of Technology |
| Date | 2001/5/18 |
| Paper # | ED2001-32,CPM2001-19,SDM2001-32 |
| Volume (vol) | vol.101 |
| Number (no) | 83 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |