Presentation 2001/5/18
Formation and caracterization of polytetrafluoroethylene films deposited by synchrotron radiation
Eisuke Matsumoto, Minoru Uchida, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida,
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Abstract(in English) In this study, polytetrafluoroethytene (PTFE) films were deposited on Si substrate using synchrotron radiation (SR). According to the X-ray diffraction (XRD) result, deposited film have a good crystallinity. Deposition rate was proportional to beam current and target temperature. The highest deposition rate is about 1000Å/s. With increased target temperature, rough surface was observed by atomic force microscope (AFM). In situ mass spectrometric analysis of gaseous species was made. These results suggest that formation of high quality PTFE films can be achieved with high density SR photon flux irradiation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Teflon / synchrotron radiation / crystallinity / surface morphology
Paper # ED2001-31,CPM2001-18,SDN2001-31
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Committee SDM
Conference Date 2001/5/18(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation and caracterization of polytetrafluoroethylene films deposited by synchrotron radiation
Sub Title (in English)
Keyword(1) Teflon
Keyword(2) synchrotron radiation
Keyword(3) crystallinity
Keyword(4) surface morphology
1st Author's Name Eisuke Matsumoto
1st Author's Affiliation Department of Electrical and Electronic Engineering Toyohashi University of Technology()
2nd Author's Name Minoru Uchida
2nd Author's Affiliation Department of Electrical and Electronic Engineering Toyohashi University of Technology
3rd Author's Name Hiroshi Okada
3rd Author's Affiliation Department of Electrical and Electronic Engineering Toyohashi University of Technology
4th Author's Name Akihiro Wakahara
4th Author's Affiliation Department of Electrical and Electronic Engineering Toyohashi University of Technology
5th Author's Name Akira Yoshida
5th Author's Affiliation Department of Electrical and Electronic Engineering Toyohashi University of Technology
Date 2001/5/18
Paper # ED2001-31,CPM2001-18,SDN2001-31
Volume (vol) vol.101
Number (no) 83
Page pp.pp.-
#Pages 6
Date of Issue