Presentation | 2001/5/18 Formation and caracterization of polytetrafluoroethylene films deposited by synchrotron radiation Eisuke Matsumoto, Minoru Uchida, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this study, polytetrafluoroethytene (PTFE) films were deposited on Si substrate using synchrotron radiation (SR). According to the X-ray diffraction (XRD) result, deposited film have a good crystallinity. Deposition rate was proportional to beam current and target temperature. The highest deposition rate is about 1000Å/s. With increased target temperature, rough surface was observed by atomic force microscope (AFM). In situ mass spectrometric analysis of gaseous species was made. These results suggest that formation of high quality PTFE films can be achieved with high density SR photon flux irradiation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Teflon / synchrotron radiation / crystallinity / surface morphology |
Paper # | ED2001-31,CPM2001-18,SDN2001-31 |
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Committee | SDM |
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Conference Date | 2001/5/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Formation and caracterization of polytetrafluoroethylene films deposited by synchrotron radiation |
Sub Title (in English) | |
Keyword(1) | Teflon |
Keyword(2) | synchrotron radiation |
Keyword(3) | crystallinity |
Keyword(4) | surface morphology |
1st Author's Name | Eisuke Matsumoto |
1st Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology() |
2nd Author's Name | Minoru Uchida |
2nd Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology |
3rd Author's Name | Hiroshi Okada |
3rd Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology |
4th Author's Name | Akihiro Wakahara |
4th Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology |
5th Author's Name | Akira Yoshida |
5th Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology |
Date | 2001/5/18 |
Paper # | ED2001-31,CPM2001-18,SDN2001-31 |
Volume (vol) | vol.101 |
Number (no) | 83 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |