Presentation | 2001/3/6 Morphotropic Phase Boundaries and Physical Properties Y. Ishibashi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | It is known that ferroelectric materials located in the vicinity of the morphotropic phase boundaries manifest useful physical properties like large dielectric constant, elastic compliance, piezoelectric constant and electo-mechanical coupling constantS. All of these excellent physical properties can be attributed to that the free energy function is almost isotropic in the vicinity of the morphotropic phase boundaries, and the system is very sensitive to the transversal forces. But such materials may not be suitable for the application as the memory element, since back-switching may easily occur in them, deteriorating the information retention. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Morphotropic phase boundaries / ferroelectrics / phase transition |
Paper # | SDM2000-240 |
Date of Issue |
Conference Information | |
Committee | SDM |
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Conference Date | 2001/3/6(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Morphotropic Phase Boundaries and Physical Properties |
Sub Title (in English) | |
Keyword(1) | Morphotropic phase boundaries |
Keyword(2) | ferroelectrics |
Keyword(3) | phase transition |
1st Author's Name | Y. Ishibashi |
1st Author's Affiliation | Aichi Shukutoku University() |
Date | 2001/3/6 |
Paper # | SDM2000-240 |
Volume (vol) | vol.100 |
Number (no) | 653 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |