Presentation 2001/3/6
Morphotropic Phase Boundaries and Physical Properties
Y. Ishibashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) It is known that ferroelectric materials located in the vicinity of the morphotropic phase boundaries manifest useful physical properties like large dielectric constant, elastic compliance, piezoelectric constant and electo-mechanical coupling constantS. All of these excellent physical properties can be attributed to that the free energy function is almost isotropic in the vicinity of the morphotropic phase boundaries, and the system is very sensitive to the transversal forces. But such materials may not be suitable for the application as the memory element, since back-switching may easily occur in them, deteriorating the information retention.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Morphotropic phase boundaries / ferroelectrics / phase transition
Paper # SDM2000-240
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Conference Information
Committee SDM
Conference Date 2001/3/6(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Morphotropic Phase Boundaries and Physical Properties
Sub Title (in English)
Keyword(1) Morphotropic phase boundaries
Keyword(2) ferroelectrics
Keyword(3) phase transition
1st Author's Name Y. Ishibashi
1st Author's Affiliation Aichi Shukutoku University()
Date 2001/3/6
Paper # SDM2000-240
Volume (vol) vol.100
Number (no) 653
Page pp.pp.-
#Pages 8
Date of Issue