Presentation | 2001/3/6 Low Temperature Preparation and Orientation Control of High Quality SrBi_2Ta_2O_9 Thin Films Norimasa NUKAGA, Masatoshi MITSUYA, Hiroshi FUNAKUBO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We compared a directly crystallized SrBi_2Ta_2O_9 film prepared by ECR-metalorganic chemical vapor deposition (MOCVD) with that transformed by solid phase reaction from fluorite phase. The distribution to get large remanent polarization (2Pr) and coercive field (Ec) against the Bi/Ta mole ratio of directly crystallized film from the gas phase was narrow compared with that crystallized by the solid phase reaction. Moreover, the Bi/Ta mole ratio showing the maximum 2Pr value was different by the preparation method. The crystallinity and orientation of directly crystallized SBT phase from the gas phase were strongly influenced by those of the substrate. Consequently, the direct crystallization of the film from the gas phase is one of the important techniques for lowering the crystallization temperature of SBT phase. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SrBi_2Ta_2O_9 / MOCVD / Direct preparation / 103 preferred orientation / local epitaxial growth |
Paper # | SDM2000-237 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2001/3/6(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Low Temperature Preparation and Orientation Control of High Quality SrBi_2Ta_2O_9 Thin Films |
Sub Title (in English) | |
Keyword(1) | SrBi_2Ta_2O_9 |
Keyword(2) | MOCVD |
Keyword(3) | Direct preparation |
Keyword(4) | 103 preferred orientation |
Keyword(5) | local epitaxial growth |
1st Author's Name | Norimasa NUKAGA |
1st Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology() |
2nd Author's Name | Masatoshi MITSUYA |
2nd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
3rd Author's Name | Hiroshi FUNAKUBO |
3rd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
Date | 2001/3/6 |
Paper # | SDM2000-237 |
Volume (vol) | vol.100 |
Number (no) | 653 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |