Presentation 2001/3/6
Low Temperature Preparation and Orientation Control of High Quality SrBi_2Ta_2O_9 Thin Films
Norimasa NUKAGA, Masatoshi MITSUYA, Hiroshi FUNAKUBO,
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Abstract(in English) We compared a directly crystallized SrBi_2Ta_2O_9 film prepared by ECR-metalorganic chemical vapor deposition (MOCVD) with that transformed by solid phase reaction from fluorite phase. The distribution to get large remanent polarization (2Pr) and coercive field (Ec) against the Bi/Ta mole ratio of directly crystallized film from the gas phase was narrow compared with that crystallized by the solid phase reaction. Moreover, the Bi/Ta mole ratio showing the maximum 2Pr value was different by the preparation method. The crystallinity and orientation of directly crystallized SBT phase from the gas phase were strongly influenced by those of the substrate. Consequently, the direct crystallization of the film from the gas phase is one of the important techniques for lowering the crystallization temperature of SBT phase.
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Keyword(in English) SrBi_2Ta_2O_9 / MOCVD / Direct preparation / 103 preferred orientation / local epitaxial growth
Paper # SDM2000-237
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Committee SDM
Conference Date 2001/3/6(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Temperature Preparation and Orientation Control of High Quality SrBi_2Ta_2O_9 Thin Films
Sub Title (in English)
Keyword(1) SrBi_2Ta_2O_9
Keyword(2) MOCVD
Keyword(3) Direct preparation
Keyword(4) 103 preferred orientation
Keyword(5) local epitaxial growth
1st Author's Name Norimasa NUKAGA
1st Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology()
2nd Author's Name Masatoshi MITSUYA
2nd Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
3rd Author's Name Hiroshi FUNAKUBO
3rd Author's Affiliation Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
Date 2001/3/6
Paper # SDM2000-237
Volume (vol) vol.100
Number (no) 653
Page pp.pp.-
#Pages 6
Date of Issue