Presentation | 2001/3/6 The formation of ruthenium electrodes by the chemical vapor deposition from a Ru(C_5H_4C_2H_5)_2 precursor dissolved in tetrahydrofurane Y. Shimamoto, M. Hiratani, Y. Matsui, T. Nabatame, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We analyzed a growth mechanism of ruthenium electrodes prepared by a chemical vapor deposition. A bis(ethylcyclopentadienyl)ruthenium [Ru(C_5H_4C_2H_5)_2] dissolved in tetrahydrofurane [THF] solvent was used as the precursor material for a liquid-transfer method. The film growth was greatly affected by the substrate's materials and growing surfaces, and it was controlled by the oxygen adsorption to the surface. The ruthenium surface shortened the incubation time as compared with the SiO_2 surface. This is because the Ru surface enhanced the oxygen adsorption and accelerated the generation of growth nuclei at the initial stage of growth. In addition, the excellent step coverage of Ru-covered holes was obtained in the region of oxygen-controlled surface reaction with decreasing the oxygen partial pressure. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ruthenium / CVD / electrode / dielectrics / step coverage / oxygen adsorption |
Paper # | SDM2000-236 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2001/3/6(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | The formation of ruthenium electrodes by the chemical vapor deposition from a Ru(C_5H_4C_2H_5)_2 precursor dissolved in tetrahydrofurane |
Sub Title (in English) | |
Keyword(1) | ruthenium |
Keyword(2) | CVD |
Keyword(3) | electrode |
Keyword(4) | dielectrics |
Keyword(5) | step coverage |
Keyword(6) | oxygen adsorption |
1st Author's Name | Y. Shimamoto |
1st Author's Affiliation | Central Research Laboratory, Hitachi, Ltd.() |
2nd Author's Name | M. Hiratani |
2nd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
3rd Author's Name | Y. Matsui |
3rd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
4th Author's Name | T. Nabatame |
4th Author's Affiliation | Hitachi Research Laboratory, Hitachi, Ltd. |
Date | 2001/3/6 |
Paper # | SDM2000-236 |
Volume (vol) | vol.100 |
Number (no) | 653 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |