Presentation 2001/3/6
The formation of ruthenium electrodes by the chemical vapor deposition from a Ru(C_5H_4C_2H_5)_2 precursor dissolved in tetrahydrofurane
Y. Shimamoto, M. Hiratani, Y. Matsui, T. Nabatame,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We analyzed a growth mechanism of ruthenium electrodes prepared by a chemical vapor deposition. A bis(ethylcyclopentadienyl)ruthenium [Ru(C_5H_4C_2H_5)_2] dissolved in tetrahydrofurane [THF] solvent was used as the precursor material for a liquid-transfer method. The film growth was greatly affected by the substrate's materials and growing surfaces, and it was controlled by the oxygen adsorption to the surface. The ruthenium surface shortened the incubation time as compared with the SiO_2 surface. This is because the Ru surface enhanced the oxygen adsorption and accelerated the generation of growth nuclei at the initial stage of growth. In addition, the excellent step coverage of Ru-covered holes was obtained in the region of oxygen-controlled surface reaction with decreasing the oxygen partial pressure.
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Keyword(in English) ruthenium / CVD / electrode / dielectrics / step coverage / oxygen adsorption
Paper # SDM2000-236
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Committee SDM
Conference Date 2001/3/6(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The formation of ruthenium electrodes by the chemical vapor deposition from a Ru(C_5H_4C_2H_5)_2 precursor dissolved in tetrahydrofurane
Sub Title (in English)
Keyword(1) ruthenium
Keyword(2) CVD
Keyword(3) electrode
Keyword(4) dielectrics
Keyword(5) step coverage
Keyword(6) oxygen adsorption
1st Author's Name Y. Shimamoto
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name M. Hiratani
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
3rd Author's Name Y. Matsui
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
4th Author's Name T. Nabatame
4th Author's Affiliation Hitachi Research Laboratory, Hitachi, Ltd.
Date 2001/3/6
Paper # SDM2000-236
Volume (vol) vol.100
Number (no) 653
Page pp.pp.-
#Pages 6
Date of Issue