Presentation | 2001/3/5 Crystal structures and ferroelectric properties of oxide-ferroelectric materials used for FeRAMs Y. Shimakawa, Y. Kubo, Y. Tauchi, T. Kamiyama, H. Asano, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Crystal structures and ferroelectric properties of Bi-layered oxides, which are used for FeRAMs, are reported. Structure analysis using neutron diffraction data reveals significant distortion of the structure. The pronounced structural distortion of the perovskite-type unit leads to larger ferroelectric polarization and higher Curie temperature. A problem of the material against reducing conditions is also pointed out from a structural point of view. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Bi-layered ferroelectric oxides / neutron diffraction / crystal structure / structural distortion |
Paper # | SDM2000-235 |
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Committee | SDM |
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Conference Date | 2001/3/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Crystal structures and ferroelectric properties of oxide-ferroelectric materials used for FeRAMs |
Sub Title (in English) | |
Keyword(1) | Bi-layered ferroelectric oxides |
Keyword(2) | neutron diffraction |
Keyword(3) | crystal structure |
Keyword(4) | structural distortion |
1st Author's Name | Y. Shimakawa |
1st Author's Affiliation | Fundamental Research Laboratories, NEC Corporation() |
2nd Author's Name | Y. Kubo |
2nd Author's Affiliation | Fundamental Research Laboratories, NEC Corporation |
3rd Author's Name | Y. Tauchi |
3rd Author's Affiliation | Institute for Materials Science, University of Tsukuba |
4th Author's Name | T. Kamiyama |
4th Author's Affiliation | Neutron Science Laboratory, KEK |
5th Author's Name | H. Asano |
5th Author's Affiliation | Institute for Materials Science, University of Tsukuba |
Date | 2001/3/5 |
Paper # | SDM2000-235 |
Volume (vol) | vol.100 |
Number (no) | 652 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |