| Presentation | 2001/3/5 Analysis of Retention Characteristics of MFIS and MIFIS Structures Mitsue Takahashi, Kazushi Kodama, Minoru Noda, Masanori Okuyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Retention characteristics of metal-ferroelectric-insulator-semiconductor (MFIS) and metal-insulator-ferroelectric-insulator-semiconductor (M-I-FIS) structures have been investigated both theoretically and experimentally. The simulated time dependence of capacitance for the MFIS has indicated that reducing currents through the ferroelectric and the insulator layers improves the retention characteristics of the capacitance more effectively than choosing the insulators with larger dielectric constants. The M-I-FIS structure has been studied in order to reduce the charge injection between the metal and the ferroelectric layer in the MFIS. The simulations have indicated that the M-I-FIS can provide much longer retention time than the original MFIS, although the experimentally obtained retention time for the M-I-FIS seems only a little improved as compared to that of the MFIS. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric / Memory device / MFIS / Retention characteristic |
| Paper # | SDM2000-232 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/3/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Retention Characteristics of MFIS and MIFIS Structures |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric |
| Keyword(2) | Memory device |
| Keyword(3) | MFIS |
| Keyword(4) | Retention characteristic |
| 1st Author's Name | Mitsue Takahashi |
| 1st Author's Affiliation | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University() |
| 2nd Author's Name | Kazushi Kodama |
| 2nd Author's Affiliation | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University |
| 3rd Author's Name | Minoru Noda |
| 3rd Author's Affiliation | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University |
| 4th Author's Name | Masanori Okuyama |
| 4th Author's Affiliation | Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University |
| Date | 2001/3/5 |
| Paper # | SDM2000-232 |
| Volume (vol) | vol.100 |
| Number (no) | 652 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |