Presentation | 2001/3/5 Preparation of (Bi,La)_4Ti_3O_<12> Films by the Sol-Gel Technique and Application to the MFMIS Structures. Takeaki Isobe, Eisuke Tokumitsu, Takeshi Kijima, Hiroshi Ishiwara, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recently, ferroelectric memory have attracted much attention for volatile memory. In this work, we prepared (Bi,La)_4Ti_3O_<12>(BLT) films on Pt/Ti/SiO_2/Si substrates by the sol-gel technique. We found that partially replacing Bi with La in the (Bi,La)_4Ti_3O_<12> films reduce the crystallization temperature and enhance the electrical characteristics. By optimizing the excess Bi composition in the source solution, excellent ferroelectric properties(Pr=15μC/cm^2,Ec=100kV/cm) were obtained. Furthermore, we fabricated MFMIS structures with good electrical properties. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | (Bi,La)_4Ti_3O_<12> / MFMIS / ferroelectric-gate FET |
Paper # | SDM2000-231 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2001/3/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Preparation of (Bi,La)_4Ti_3O_<12> Films by the Sol-Gel Technique and Application to the MFMIS Structures. |
Sub Title (in English) | |
Keyword(1) | (Bi,La)_4Ti_3O_<12> |
Keyword(2) | MFMIS |
Keyword(3) | ferroelectric-gate FET |
1st Author's Name | Takeaki Isobe |
1st Author's Affiliation | Tokyo Institute of Technology, Precision and Intelligence Laboratory() |
2nd Author's Name | Eisuke Tokumitsu |
2nd Author's Affiliation | Tokyo Institute of Technology, Precision and Intelligence Laboratory |
3rd Author's Name | Takeshi Kijima |
3rd Author's Affiliation | Tokyo Institute of Technology, Frontier Collaborative Research Center |
4th Author's Name | Hiroshi Ishiwara |
4th Author's Affiliation | Tokyo Institute of Technology, Frontier Collaborative Research Center |
Date | 2001/3/5 |
Paper # | SDM2000-231 |
Volume (vol) | vol.100 |
Number (no) | 652 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |