| Presentation | 2001/3/5 Effect of Bi Content on Physical Properties of Bi_2SiO_5 Thin Films Masaki Yamaguchi, Takao Nagatomo, Yoichiro Masuda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Bismuth silicate (Bi_2SiO_5) thin films were formed on (100)-oriented silicon wafers derived by metal organic decomposition (MOD) method. The effect on the thin film characteristics by the Bi content was examined. The c-axis-oriented Bi_2SiO_5 films were obtained. The average grain size for the film is increased when the Bi content is increased. The leakage current density lowers by the excess Bi content. The leakage current density is on the order of 10^6A/cm^<-2>. From capacitance-voltage characteristics measurement results, it is worth nothing that hysteresis is hardly observed, and the relative dielectric constant of the film was approximately 30. The thickness of lower-dielectric-constant- layer was decreased by excess Bi contents. These results suggest that MOD-Bi_2SiO_5 films expected for application for MFIS slructures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Bismuth content / Bismuth silicate / metal-organic decomposition method / thin films |
| Paper # | SDM2000-230 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/3/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Bi Content on Physical Properties of Bi_2SiO_5 Thin Films |
| Sub Title (in English) | |
| Keyword(1) | Bismuth content |
| Keyword(2) | Bismuth silicate |
| Keyword(3) | metal-organic decomposition method |
| Keyword(4) | thin films |
| 1st Author's Name | Masaki Yamaguchi |
| 1st Author's Affiliation | Department of Electrical Engineering, Shibaura Institute of Technology:Research Organization for Advanced Engineering, Shibaura Institute of Technology() |
| 2nd Author's Name | Takao Nagatomo |
| 2nd Author's Affiliation | Department of Electrical Engineering, Shibaura Institute of Technology:Research Organization for Advanced Engineering, Shibaura Institute of Technology |
| 3rd Author's Name | Yoichiro Masuda |
| 3rd Author's Affiliation | Department of Electrical Engineering, Hachinohe Institute of Technology |
| Date | 2001/3/5 |
| Paper # | SDM2000-230 |
| Volume (vol) | vol.100 |
| Number (no) | 652 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |