| Presentation | 2001/3/5 Al_2O_3/Si_3N_4 buffer layer for MFIS structures Yoshihisa Fujisaki, Hiroshi Ishiwara, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The Al_2O_3 thin film was deposited on the N_2 radical Si_3N_4 that was proved to have high oxidation resistance. The 3.5nm-thick Al_2O_3 film was proved to have the permittivity of 9.76 in this stacked Al_2O_3/Si_3N_4 structure. During the Al_2O_3 deposition process, Si_3N_4/Si interface showed no degradation that is attributable to the high oxidation resistance of radical Si_3N_4 film. The MIS (Metal Insulator Semiconductor) diode with Al_2O_3/Si_3N_4 realized 10^5 times smaller leakage current compared to the MIS diode with Si_3N_4 that has similar capacitance density to the former one. We showed the stacked Al_2O_3/Si_3N_4 insulator has enough stability as a buffer layer in MFIS (Metal Ferroelectric Insulator Semiconductor) devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitrogen radical / alumina / damage-free / ferroelectric transistor |
| Paper # | SDM2000-229 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/3/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Al_2O_3/Si_3N_4 buffer layer for MFIS structures |
| Sub Title (in English) | |
| Keyword(1) | Nitrogen radical |
| Keyword(2) | alumina |
| Keyword(3) | damage-free |
| Keyword(4) | ferroelectric transistor |
| 1st Author's Name | Yoshihisa Fujisaki |
| 1st Author's Affiliation | Frontier Collaborative Research Center, Tokyo Institute of Technology() |
| 2nd Author's Name | Hiroshi Ishiwara |
| 2nd Author's Affiliation | Frontier Collaborative Research Center, Tokyo Institute of Technology |
| Date | 2001/3/5 |
| Paper # | SDM2000-229 |
| Volume (vol) | vol.100 |
| Number (no) | 652 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |