| Presentation | 2001/3/5 Ir Film Deposition on an Epitaxial (100)ZrN/(100)Si Substrate Treated by HF+Hydrazine Solution Sadayoshi Horii, Takeo Toda, Susumu Horita, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to fabricate an epitaxial PZT/Ir/ZrN/Si structure by sputtering, the Ir film was deposited on the epitaxial ZrN/(100)Si substrate. However, the ZrN film was oxidized by residual oxygen and its compound during the Ir film deposition. Then, many pellets of Zr with a strong gettering effect were placed on an Ir metallic target. By using this target and higher deposition rate, the oxidation of ZrN was fully suppressed. However, the Ir film had (111) orientation. Then, we tried to remove the surface oxidation layer of ZrN and prevent its re-oxidation by treatment of HF+hydrazine solution before the Ir film deposition. As a result, the Ir film had high (100) orientation even with the higher deposition rate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si / ZrN / Ir / sputtering / heteroepitaxial growth / hydrazine |
| Paper # | SDM2000-228 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/3/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ir Film Deposition on an Epitaxial (100)ZrN/(100)Si Substrate Treated by HF+Hydrazine Solution |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | ZrN |
| Keyword(3) | Ir |
| Keyword(4) | sputtering |
| Keyword(5) | heteroepitaxial growth |
| Keyword(6) | hydrazine |
| 1st Author's Name | Sadayoshi Horii |
| 1st Author's Affiliation | Japan Advanced Institute of Science and Technology, School of Material Science:Hitachi Kokusai Electric Inc.() |
| 2nd Author's Name | Takeo Toda |
| 2nd Author's Affiliation | Japan Advanced Institute of Science and Technology, School of Material Science |
| 3rd Author's Name | Susumu Horita |
| 3rd Author's Affiliation | Japan Advanced Institute of Science and Technology, School of Material Science |
| Date | 2001/3/5 |
| Paper # | SDM2000-228 |
| Volume (vol) | vol.100 |
| Number (no) | 652 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |