Presentation	2001/1/23 Dielectric Breakdown in Damascene Cu Interconnection Ken-ichi Takeda, Kenji Hinode,
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Abstract(in English)	Dielectric degradation in Cu damascene interconnection is described. Time-dependent dielectric breakdown (TDDB) caused by Cu contamination is one of critical reliability issue. TDDB barrier materials such as titanium nitride and silicon nitride (SiN) can provide sufficient reliability against Cu diffusion. In damascene structure, many bonds defects are introduced by chemical mechanical polishing (CMP). These defects appear to degrade the TDDB characteristics and to increase line-to-line leakage currents. Improvements in TDDB and reductions of the leakage currents are achieved by employing both abrasive-free polishing of Cu and ammonia (NH_3) plasma treatment of a Cu-CMP surface.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Damascene Cu Interconnection / TDDB / Dielectric Breakdown
Paper #	SDM2000-191
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Conference Information
Committee	SDM
Conference Date	2001/1/23(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Dielectric Breakdown in Damascene Cu Interconnection
Sub Title (in English)
Keyword(1)	Damascene Cu Interconnection
Keyword(2)	TDDB
Keyword(3)	Dielectric Breakdown
1st Author's Name	Ken-ichi Takeda
1st Author's Affiliation	Central Research Laboratory, Hitachi Ltd.()
2nd Author's Name	Kenji Hinode
2nd Author's Affiliation	Central Research Laboratory, Hitachi Ltd.
Date	2001/1/23
Paper #	SDM2000-191
Volume (vol)	vol.100
Number (no)	603
Page	pp.pp.-
#Pages	6
Date of Issue