Presentation 2001/2/22
Optimization and Application of GaAs-based Quantum Wire Transistors Utilizing Schottky In-Plane Gates and Wrap Gates
Miki Yumoto, Masanobu Iwaya, Seiya Kasai, Hideki Hasegawa,
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Abstract(in English) Basic device characteristics GaAs Schottky in-plane gate(IPG)- and wrap gate(WPG)-based quantum wire transistors were investigated, and the device structures were optimized for their integrated circuit applications. The gate controllability in each gate structure including the gate-voltage dependence of effective wire width was characterized by current-voltage and magnetoresistance measurements. The control of conductance step characteristics and the threshold voltage in the IPG/WPG quantum wire transistors were also discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quantum wire transistor / Schottky junction / in-plane gate(IPG) / wrap gate(WPG) / conductance quantization
Paper # ED2000-264,SDM2000-218
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Committee SDM
Conference Date 2001/2/22(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optimization and Application of GaAs-based Quantum Wire Transistors Utilizing Schottky In-Plane Gates and Wrap Gates
Sub Title (in English)
Keyword(1) quantum wire transistor
Keyword(2) Schottky junction
Keyword(3) in-plane gate(IPG)
Keyword(4) wrap gate(WPG)
Keyword(5) conductance quantization
1st Author's Name Miki Yumoto
1st Author's Affiliation Research Center for Interface Quantum Electronics, Hokkaido University:Graduate School of Electronics and Information Engineering, Hokkaido University()
2nd Author's Name Masanobu Iwaya
2nd Author's Affiliation Research Center for Interface Quantum Electronics, Hokkaido University:Graduate School of Electronics and Information Engineering, Hokkaido University
3rd Author's Name Seiya Kasai
3rd Author's Affiliation Research Center for Interface Quantum Electronics, Hokkaido University:Graduate School of Electronics and Information Engineering, Hokkaido University
4th Author's Name Hideki Hasegawa
4th Author's Affiliation Research Center for Interface Quantum Electronics, Hokkaido University:Graduate School of Electronics and Information Engineering, Hokkaido University
Date 2001/2/22
Paper # ED2000-264,SDM2000-218
Volume (vol) vol.100
Number (no) 644
Page pp.pp.-
#Pages 7
Date of Issue