| Presentation | 2001/2/21 Electron charging characteristics and memory function of silicon quantum-dot floating gate MOS structures Atsushi Kohno, Mitsuhisa Ikeda, Hideki Murakami, Seiichi Miyazaki, Masataka Hirose, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Metal-oxide-semiconductor(MOS)structures with silicon quantum-dots(QDs)embedded in the gate oxide as a floating gate have been designed and fabricated, and their memory operation has been demonstrated at room temperature. The unique hysteresis and the current bumps in drain current versus gate voltage characteristics of QD floating gate MOS field-effect transistors(FETs)have been interpreted in terms of the electron charging to the QD floating gate. From the analysis of the transient drain-current characteristics for a single-pulse gate bias, we also confirm that the electron charging of QDs takes place to be multiple stages until reaching the stable state for one electron per dot. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon quantum-dot / floating gate / memory / electron charging / threshold voltage shift |
| Paper # | ED2000-257,SDM2000-211 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/2/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electron charging characteristics and memory function of silicon quantum-dot floating gate MOS structures |
| Sub Title (in English) | |
| Keyword(1) | silicon quantum-dot |
| Keyword(2) | floating gate |
| Keyword(3) | memory |
| Keyword(4) | electron charging |
| Keyword(5) | threshold voltage shift |
| 1st Author's Name | Atsushi Kohno |
| 1st Author's Affiliation | Department of Aplied Physics, Fukuoka University() |
| 2nd Author's Name | Mitsuhisa Ikeda |
| 2nd Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 3rd Author's Name | Hideki Murakami |
| 3rd Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 4th Author's Name | Seiichi Miyazaki |
| 4th Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 5th Author's Name | Masataka Hirose |
| 5th Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| Date | 2001/2/21 |
| Paper # | ED2000-257,SDM2000-211 |
| Volume (vol) | vol.100 |
| Number (no) | 643 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |