| Presentation | 2001/2/21 Fabrication of PtSi Schottky Source/Drain vertical MOSFET M. Tsutsui, T. Nagai, M. Asada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report on fabrication and characteristics of PtSi Schottky source/drain vertical MOSFETs. The lateral thicknesses of the Si Channel were 8nm, 20nm and 30nm, and the vertical channel length was 50nm. The on/off ration for 8nm-thick device was 250. Although the drain current at the "on" state is not large at present due to thick gate oxide, it can much improved by reducing the oxide thickness. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Schottky source/drain MOSFET / vertical transistor / PtSi/Si |
| Paper # | ED2000-256,SDM2000-210 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/2/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of PtSi Schottky Source/Drain vertical MOSFET |
| Sub Title (in English) | |
| Keyword(1) | Schottky source/drain MOSFET |
| Keyword(2) | vertical transistor |
| Keyword(3) | PtSi/Si |
| 1st Author's Name | M. Tsutsui |
| 1st Author's Affiliation | Department of Electrical and Electronic Eng., Tokyo Institute of Technology() |
| 2nd Author's Name | T. Nagai |
| 2nd Author's Affiliation | Department of Electrical and Electronic Eng., Tokyo Institute of Technology |
| 3rd Author's Name | M. Asada |
| 3rd Author's Affiliation | Inerdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2001/2/21 |
| Paper # | ED2000-256,SDM2000-210 |
| Volume (vol) | vol.100 |
| Number (no) | 643 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |