| Presentation | 2001/2/21 Study on quantum-size effects and alloying effects of InAs-and InGaAs-quantum dots on GaAs(001)using scanning tunneling spectroscopy T. Yamauchi, Y. Ohyama, Y. Matsuba, M. Tabuchi, A. Nakamura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Using scanning tunneling spectroscopy, we have investigated a correlation between a electronic structure and morphological structure of InAs and InGaAs quantum dots(QDs)grown on GaAs(001). The observed height dependence of the gap energy has been well reproduced by the calculated one. For InAs QDs, comparison of the observed dependence with the calculated one indicates that the gap energy of a single InAs QD is mainly determined by the quantum confinement in the vertical direction of the QD. For In_<0.46>Ga_<0.54>As QDs, however, the comparison shows that enrichment of In-composition in the dot compared to the nominal composition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InAs / InGaAs / quantum dot / quantum-size-effect / alloying / STM / STS |
| Paper # | ED2000-252,SDM2000-206 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/2/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on quantum-size effects and alloying effects of InAs-and InGaAs-quantum dots on GaAs(001)using scanning tunneling spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | InAs |
| Keyword(2) | InGaAs |
| Keyword(3) | quantum dot |
| Keyword(4) | quantum-size-effect |
| Keyword(5) | alloying |
| Keyword(6) | STM |
| Keyword(7) | STS |
| 1st Author's Name | T. Yamauchi |
| 1st Author's Affiliation | CREST of Japan Science and Technology Corporation(JST)() |
| 2nd Author's Name | Y. Ohyama |
| 2nd Author's Affiliation | Graduate school of engineering, Nagoya University |
| 3rd Author's Name | Y. Matsuba |
| 3rd Author's Affiliation | Graduate school of engineering, Nagoya University |
| 4th Author's Name | M. Tabuchi |
| 4th Author's Affiliation | Graduate school of engineering, Nagoya University |
| 5th Author's Name | A. Nakamura |
| 5th Author's Affiliation | CREST of Japan Science and Technology Corporation(JST):Center for Integrated Research in Science and Engineering, Nagoya University |
| Date | 2001/2/21 |
| Paper # | ED2000-252,SDM2000-206 |
| Volume (vol) | vol.100 |
| Number (no) | 643 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |