Presentation 2001/2/21
STM Observation of surface electron wave on InAs/GaAs(111)A heterostructures
Hiroshi Yamaguchim, Kiyoshi Kanosawa, Yoshiro Hirayama,
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Abstract(in English) On GaAs(111)A Substrates, atomically flat InAs thin film can be grown despite of the large lattice mismatch of 7%. This surface has unique features that(i)2D surface electron channel is naturally formed, (ii)the(2x2)surface reocnstruction has very small corrugation of only sub-angstrom scale, and(iii)electrically unisolated nano-scale structures are self-organized during the growth. Utilizing these features, we have successfully observed the standing wave of zero-dimensional electronic states in semiconductor zero-dimensional nanostructures by scanning tunneling microscopy.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Nanostructures / quantum dots / electron wave / low-temperature STM
Paper # ED2000-251,SDM2000-205
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Committee SDM
Conference Date 2001/2/21(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) STM Observation of surface electron wave on InAs/GaAs(111)A heterostructures
Sub Title (in English)
Keyword(1) Nanostructures
Keyword(2) quantum dots
Keyword(3) electron wave
Keyword(4) low-temperature STM
1st Author's Name Hiroshi Yamaguchim
1st Author's Affiliation NTT Basic Research Laboratories()
2nd Author's Name Kiyoshi Kanosawa
2nd Author's Affiliation NTT Basic Research Laboratories
3rd Author's Name Yoshiro Hirayama
3rd Author's Affiliation NTT Basic Research Laboratories
Date 2001/2/21
Paper # ED2000-251,SDM2000-205
Volume (vol) vol.100
Number (no) 643
Page pp.pp.-
#Pages 7
Date of Issue