| Presentation | 2001/2/21 Characterization of ultrathin insulator/Si interfaces formed on n-Si(001)by UHV contactless capacitance-voltage method Ryouhei SHOUJI, Tamotsu HASHIZUME, Toshiyuki YOSHIDA, Masamichi AKAZAWA, Hideki HASEGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ultrathin insulator/Si interfaces formed by various low temperature processes were characterized by UHV contactless C-V and XPS methods. For the SiO_2/Si interfaces prepared by a thermal oxidation process using dry O_2, the interface state density was increased with decreasing the oxidation temperature. In addition, lower temperature process was found to produce a discrete defect level near midgap. The ECR-excited N_2O plasma process at 400°C realized the interface with relatively low interface state density and wide destribution. Furthermore improvement of interface properties were achieved by the UHV annealing process at 900°C. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si / contactless capacitance-voltage / hyfrogen-termination / ultrathin insulator / Si / ECR-N_2O plasma |
| Paper # | ED2000-249,SDM2000-203 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/2/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of ultrathin insulator/Si interfaces formed on n-Si(001)by UHV contactless capacitance-voltage method |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | contactless capacitance-voltage |
| Keyword(3) | hyfrogen-termination |
| Keyword(4) | ultrathin insulator |
| Keyword(5) | Si |
| Keyword(6) | ECR-N_2O plasma |
| 1st Author's Name | Ryouhei SHOUJI |
| 1st Author's Affiliation | Graduate School of Electronics and Information Engineering Hokkaido University() |
| 2nd Author's Name | Tamotsu HASHIZUME |
| 2nd Author's Affiliation | Research Center for Interface Quantum Electronics Hokkaido University |
| 3rd Author's Name | Toshiyuki YOSHIDA |
| 3rd Author's Affiliation | Graduate School of Electronics and Information Engineering Hokkaido University |
| 4th Author's Name | Masamichi AKAZAWA |
| 4th Author's Affiliation | Graduate School of Electronics and Information Engineering Hokkaido University |
| 5th Author's Name | Hideki HASEGAWA |
| 5th Author's Affiliation | Graduate School of Electronics and Information Engineering Hokkaido University:Research Center for Interface Quantum Electronics Hokkaido University |
| Date | 2001/2/21 |
| Paper # | ED2000-249,SDM2000-203 |
| Volume (vol) | vol.100 |
| Number (no) | 643 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |