| Presentation | 2001/2/21 Fabrication of GaN dots array on Si substrate by selective area growth method Masahito Yamaguchi, Yoshio Honda, Nobuhiko Sawaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated sub-micron GaN dots array on(111)Si substrate by metal organic vapor phase epitaxy(MOVPE)selective area growth. The SiO_2 mask for the selective area growth was prepared with electron beam lithography system and the circle window diameter of the mask was less than 250 nm. The bottom and top surface size of the fabricated GaN dots was about 250 nm and 50 nm, respectively. In comparison with the GaN dots grown on sapphire substrate, the shape of the facet was found to be clear. The optical properties in the GaN dot on Si substrate are relatively good. Therefore, the(111)Si substrate is suitable for the fabrication of the GaN quantum dots. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN dot / (111)Si substrate / selective area growth / electron beam lithography / MOVPE |
| Paper # | ED2000-246,SDM2000-200 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2001/2/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of GaN dots array on Si substrate by selective area growth method |
| Sub Title (in English) | |
| Keyword(1) | GaN dot |
| Keyword(2) | (111)Si substrate |
| Keyword(3) | selective area growth |
| Keyword(4) | electron beam lithography |
| Keyword(5) | MOVPE |
| 1st Author's Name | Masahito Yamaguchi |
| 1st Author's Affiliation | Department of Electronics, Graduate School of Engineering, Nagoya University() |
| 2nd Author's Name | Yoshio Honda |
| 2nd Author's Affiliation | Department of Electronics, Graduate School of Engineering, Nagoya University |
| 3rd Author's Name | Nobuhiko Sawaki |
| 3rd Author's Affiliation | Department of Electronics, Graduate School of Engineering, Nagoya University |
| Date | 2001/2/21 |
| Paper # | ED2000-246,SDM2000-200 |
| Volume (vol) | vol.100 |
| Number (no) | 643 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |