Presentation | 2001/2/21 Fabrication of c-Si/SiO_2 low dimensional structure using selective epitaxial growth by gas source molecular beam epitaxy Toru SEGAWA, Satoru MATSUMOTO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We proposed the very simple process for fabricating c-Si/SiO_2 low dimensional structure(zero or one dimensional system)using selective epitaxial growth by Si-GSMBE which has very accurate film-thickness controllability, and isotropic wet etching with Electron Beam lithography. Also, we investigated the crystal structure, the uniformity of crystal, and the mechanism of crystal growth by using AFM, FE-SEM, and HR-TEM. Finally, optical properties of c-Si/SiO_2 crystal structures with controlled size, density, and period were evaluated by Cathodo-Luminescence(CL). |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GS-MBE / selective epitaxial growth / low dimensional structure / optical properties / CL |
Paper # | ED2000-243,SDM2000-197 |
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Committee | SDM |
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Conference Date | 2001/2/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of c-Si/SiO_2 low dimensional structure using selective epitaxial growth by gas source molecular beam epitaxy |
Sub Title (in English) | |
Keyword(1) | GS-MBE |
Keyword(2) | selective epitaxial growth |
Keyword(3) | low dimensional structure |
Keyword(4) | optical properties |
Keyword(5) | CL |
1st Author's Name | Toru SEGAWA |
1st Author's Affiliation | Department of Electronics and Electrical Engineering, Keio University() |
2nd Author's Name | Satoru MATSUMOTO |
2nd Author's Affiliation | Department of Electronics and Electrical Engineering, Keio University |
Date | 2001/2/21 |
Paper # | ED2000-243,SDM2000-197 |
Volume (vol) | vol.100 |
Number (no) | 643 |
Page | pp.pp.- |
#Pages | 8 |
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