Presentation 2001/2/21
Fabrication of c-Si/SiO_2 low dimensional structure using selective epitaxial growth by gas source molecular beam epitaxy
Toru SEGAWA, Satoru MATSUMOTO,
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Abstract(in English) We proposed the very simple process for fabricating c-Si/SiO_2 low dimensional structure(zero or one dimensional system)using selective epitaxial growth by Si-GSMBE which has very accurate film-thickness controllability, and isotropic wet etching with Electron Beam lithography. Also, we investigated the crystal structure, the uniformity of crystal, and the mechanism of crystal growth by using AFM, FE-SEM, and HR-TEM. Finally, optical properties of c-Si/SiO_2 crystal structures with controlled size, density, and period were evaluated by Cathodo-Luminescence(CL).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GS-MBE / selective epitaxial growth / low dimensional structure / optical properties / CL
Paper # ED2000-243,SDM2000-197
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Committee SDM
Conference Date 2001/2/21(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of c-Si/SiO_2 low dimensional structure using selective epitaxial growth by gas source molecular beam epitaxy
Sub Title (in English)
Keyword(1) GS-MBE
Keyword(2) selective epitaxial growth
Keyword(3) low dimensional structure
Keyword(4) optical properties
Keyword(5) CL
1st Author's Name Toru SEGAWA
1st Author's Affiliation Department of Electronics and Electrical Engineering, Keio University()
2nd Author's Name Satoru MATSUMOTO
2nd Author's Affiliation Department of Electronics and Electrical Engineering, Keio University
Date 2001/2/21
Paper # ED2000-243,SDM2000-197
Volume (vol) vol.100
Number (no) 643
Page pp.pp.-
#Pages 8
Date of Issue