Presentation 2000/11/23
Improvement of analog characteristics by epitaxial channel structure
T. Ohguro, R. Hasumi, M. Nishigori, H. Oyamatsu, F. Matsuoka, Y. Toyoshima,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Analog characteristics such as ft, Rf noise and flicker noise of 0.11μm CMOS under from 2.0 to 0.5V were investigated. A 1.0 V was lower supply voltage limitation in the case of 0.11 μm CMOS from point of N.F_ data. In order to avoid flicker noise degradation under low supply voltage, epitaxial channel MOSFET without halo implantation is effective.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Halo implantation / analog characteristics / 1/f noise / spice model
Paper # SDM2000-165
Date of Issue

Conference Information
Committee SDM
Conference Date 2000/11/23(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Improvement of analog characteristics by epitaxial channel structure
Sub Title (in English)
Keyword(1) Halo implantation
Keyword(2) analog characteristics
Keyword(3) 1/f noise
Keyword(4) spice model
1st Author's Name T. Ohguro
1st Author's Affiliation Toshiba Semiconductor company System LSI research & development center()
2nd Author's Name R. Hasumi
2nd Author's Affiliation Toshiba Semiconductor company System LSI research & development center
3rd Author's Name M. Nishigori
3rd Author's Affiliation Toshiba Semiconductor company System LSI research & development center
4th Author's Name H. Oyamatsu
4th Author's Affiliation Toshiba Semiconductor company System LSI research & development center
5th Author's Name F. Matsuoka
5th Author's Affiliation Toshiba Semiconductor company System LSI research & development center
6th Author's Name Y. Toyoshima
6th Author's Affiliation Toshiba Semiconductor company System LSI research & development center
Date 2000/11/23
Paper # SDM2000-165
Volume (vol) vol.100
Number (no) 477
Page pp.pp.-
#Pages 7
Date of Issue