Presentation 2000/11/23
Two Dimensional Effect on The V_		 Fluctuation of Intrinsic-Body SOI-MOSFET
Risho Koh, Kiyoshi Takeuchi, Hisashi Takemura, Tohru Mogami,
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Abstract(in English) V_ sensitivities on the variation of L and T_ is simulated for a n-channel SOI-MOSFET of L=25nm and T_=10nm. They were found that both sensitivities strongly depends on the substrate bias voltage, and that an optimum back bias voltage which minimizes these sensitivities exists. These results was investigated by comparing numerical simulation results and analytical model. The study suggests that the optimum back bias is a condition which reduces both the back channel formation and a two dimensional effect of electric filed in the buried oxide.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI / MOS / FET / threshold voltage / Vth fluctuation / short channel effect
Paper # SDM2000-163
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Conference Information
Committee SDM
Conference Date 2000/11/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Two Dimensional Effect on The V_ Fluctuation of Intrinsic-Body SOI-MOSFET
Sub Title (in English)
Keyword(1) SOI
Keyword(2) MOS
Keyword(3) FET
Keyword(4) threshold voltage
Keyword(5) Vth fluctuation
Keyword(6) short channel effect
1st Author's Name Risho Koh
1st Author's Affiliation Silicon Systems Res.Lab., System Devices and Fundamental Res.NEC Corporation()
2nd Author's Name Kiyoshi Takeuchi
2nd Author's Affiliation Silicon Systems Res.Lab., System Devices and Fundamental Res.NEC Corporation
3rd Author's Name Hisashi Takemura
3rd Author's Affiliation Silicon Systems Res.Lab., System Devices and Fundamental Res.NEC Corporation
4th Author's Name Tohru Mogami
4th Author's Affiliation Silicon Systems Res.Lab., System Devices and Fundamental Res.NEC Corporation
Date 2000/11/23
Paper # SDM2000-163
Volume (vol) vol.100
Number (no) 477
Page pp.pp.-
#Pages 8
Date of Issue