Presentation | 2000/12/14 Hot Carrier Effect in Low Temperature Poly-Si TFTs K. Katoh, Y. Uraoka, T. Hatayama, Kawamura T. /, Y. Tutihasi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have analyzed the hot carrier degradation mechanism. Compared to crystalline Si MOSFET, remarkable ON current decrease without Vt shift was observed. From the bias voltage dependence of the degradation, Drain Avalanche Hot Carrier(DAHC)was found to be dominant. Further, we have concluded that the degradation has a threshold voltage, based on date obtained by the observation by emission microscope, measurement by kink current, and device simulation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Low Temperature Poly-Si TFTs / DAHC / Kink current / Emission microscope |
Paper # | SDM2000-183 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2000/12/14(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Hot Carrier Effect in Low Temperature Poly-Si TFTs |
Sub Title (in English) | |
Keyword(1) | Low Temperature Poly-Si TFTs |
Keyword(2) | DAHC |
Keyword(3) | Kink current |
Keyword(4) | Emission microscope |
1st Author's Name | K. Katoh |
1st Author's Affiliation | School of Materials Science Nara Institute of Science and Technology() |
2nd Author's Name | Y. Uraoka |
2nd Author's Affiliation | School of Materials Science Nara Institute of Science and Technology |
3rd Author's Name | T. Hatayama |
3rd Author's Affiliation | School of Materials Science Nara Institute of Science and Technology |
4th Author's Name | Kawamura T. / |
4th Author's Affiliation | School of Materials Science Nara Institute of Science and Technology |
5th Author's Name | Y. Tutihasi |
5th Author's Affiliation | LCD Division Matsusita Electric Industrial Co., Ltd |
Date | 2000/12/14 |
Paper # | SDM2000-183 |
Volume (vol) | vol.100 |
Number (no) | 517 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |