Presentation 2000/12/14
Hot Carrier Effect in Low Temperature Poly-Si TFTs
K. Katoh, Y. Uraoka, T. Hatayama, Kawamura T. /, Y. Tutihasi,
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Abstract(in English) We have analyzed the hot carrier degradation mechanism. Compared to crystalline Si MOSFET, remarkable ON current decrease without Vt shift was observed. From the bias voltage dependence of the degradation, Drain Avalanche Hot Carrier(DAHC)was found to be dominant. Further, we have concluded that the degradation has a threshold voltage, based on date obtained by the observation by emission microscope, measurement by kink current, and device simulation.
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Keyword(in English) Low Temperature Poly-Si TFTs / DAHC / Kink current / Emission microscope
Paper # SDM2000-183
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Conference Information
Committee SDM
Conference Date 2000/12/14(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Hot Carrier Effect in Low Temperature Poly-Si TFTs
Sub Title (in English)
Keyword(1) Low Temperature Poly-Si TFTs
Keyword(2) DAHC
Keyword(3) Kink current
Keyword(4) Emission microscope
1st Author's Name K. Katoh
1st Author's Affiliation School of Materials Science Nara Institute of Science and Technology()
2nd Author's Name Y. Uraoka
2nd Author's Affiliation School of Materials Science Nara Institute of Science and Technology
3rd Author's Name T. Hatayama
3rd Author's Affiliation School of Materials Science Nara Institute of Science and Technology
4th Author's Name Kawamura T. /
4th Author's Affiliation School of Materials Science Nara Institute of Science and Technology
5th Author's Name Y. Tutihasi
5th Author's Affiliation LCD Division Matsusita Electric Industrial Co., Ltd
Date 2000/12/14
Paper # SDM2000-183
Volume (vol) vol.100
Number (no) 517
Page pp.pp.-
#Pages 6
Date of Issue