Presentation 2000/12/14
Mechanism of Device Degradation due to Dynamic Stress in Poly-Si TFTs
Yoshiaki Toyota, Takeo Shiba, Makoto Ohkura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Properties of device degradation due to dynamic stress are studied on the laser-crystallized poly-Si TFTs. It has been found that the degradation of single drain TFTs is enhanced by dynamic stress and the enhancement depends on the falling time and the frequency of stress pulse. On the other hand, the enhancement of LDD TFTs is less occurred and the degradation is dominated by accumulative DAHC stress time. In addition, The mechanism of device degradation due to dynamic stress is considered in the basis of experimental results. The enhancement of degradation due to dynamic stress is probably caused by the accelerated DAHC stress greatly affected by transitional increase of carrier concentration.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Poly-Si TFTs / Dynamic stress / Enhancement of degradation / DAHC stress / Accumulative time
Paper # SDM2000-181
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Committee SDM
Conference Date 2000/12/14(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Mechanism of Device Degradation due to Dynamic Stress in Poly-Si TFTs
Sub Title (in English)
Keyword(1) Poly-Si TFTs
Keyword(2) Dynamic stress
Keyword(3) Enhancement of degradation
Keyword(4) DAHC stress
Keyword(5) Accumulative time
1st Author's Name Yoshiaki Toyota
1st Author's Affiliation Hitachi, Ltd., Hitachi Research Laboratory., Hitachi, Ltd., Displays()
2nd Author's Name Takeo Shiba
2nd Author's Affiliation Hitachi, Ltd., Hitachi Research Laboratory., Hitachi, Ltd., Displays
3rd Author's Name Makoto Ohkura
3rd Author's Affiliation Hitachi, Ltd., Hitachi Research Laboratory., Hitachi, Ltd., Displays
Date 2000/12/14
Paper # SDM2000-181
Volume (vol) vol.100
Number (no) 517
Page pp.pp.-
#Pages 7
Date of Issue