Presentation | 2000/12/14 Study of Direct Tunneling of Very Thin SiO_2 Film Y. TAKAMI, Y. KITAGAWA, N. MATSUO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The direct tunneling(DT) conduction in the low voltage for the very thin SiO_2 films formed on n-Si(100)substrate is examined by WKB approximation method. The DT currents are calculated by considering the electron concentration at the SiO_2/n-Si interface, the quantized energy level generated by the Si surface quantization, the effective tunneling thickness of the electron and the electron distribution at the room temperature. The calculated results reproduced the measured data. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | n-Si(100) / thin SiO_2 / direct tunneling(DT) / effective tunneling thickness / electron distribution |
Paper # | SDM2000-174 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2000/12/14(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Study of Direct Tunneling of Very Thin SiO_2 Film |
Sub Title (in English) | |
Keyword(1) | n-Si(100) |
Keyword(2) | thin SiO_2 |
Keyword(3) | direct tunneling(DT) |
Keyword(4) | effective tunneling thickness |
Keyword(5) | electron distribution |
1st Author's Name | Y. TAKAMI |
1st Author's Affiliation | Dept.Electric.& Electron.Eng., Yamaguchi Univ.() |
2nd Author's Name | Y. KITAGAWA |
2nd Author's Affiliation | Dept.Electric.& Electron.Eng., Yamaguchi Univ. |
3rd Author's Name | N. MATSUO |
3rd Author's Affiliation | Dept.Electric.& Electron.Eng., Yamaguchi Univ. |
Date | 2000/12/14 |
Paper # | SDM2000-174 |
Volume (vol) | vol.100 |
Number (no) | 517 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |