Presentation 2000/12/14
Study of Direct Tunneling of Very Thin SiO_2 Film
Y. TAKAMI, Y. KITAGAWA, N. MATSUO,
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Abstract(in English) The direct tunneling(DT) conduction in the low voltage for the very thin SiO_2 films formed on n-Si(100)substrate is examined by WKB approximation method. The DT currents are calculated by considering the electron concentration at the SiO_2/n-Si interface, the quantized energy level generated by the Si surface quantization, the effective tunneling thickness of the electron and the electron distribution at the room temperature. The calculated results reproduced the measured data.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) n-Si(100) / thin SiO_2 / direct tunneling(DT) / effective tunneling thickness / electron distribution
Paper # SDM2000-174
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Committee SDM
Conference Date 2000/12/14(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study of Direct Tunneling of Very Thin SiO_2 Film
Sub Title (in English)
Keyword(1) n-Si(100)
Keyword(2) thin SiO_2
Keyword(3) direct tunneling(DT)
Keyword(4) effective tunneling thickness
Keyword(5) electron distribution
1st Author's Name Y. TAKAMI
1st Author's Affiliation Dept.Electric.& Electron.Eng., Yamaguchi Univ.()
2nd Author's Name Y. KITAGAWA
2nd Author's Affiliation Dept.Electric.& Electron.Eng., Yamaguchi Univ.
3rd Author's Name N. MATSUO
3rd Author's Affiliation Dept.Electric.& Electron.Eng., Yamaguchi Univ.
Date 2000/12/14
Paper # SDM2000-174
Volume (vol) vol.100
Number (no) 517
Page pp.pp.-
#Pages 5
Date of Issue