| Presentation | 2000/9/15 Changed Charge Partitioning for sub-100nm MOSFET due to Ballistic Transport T. Okagaki, M. Tanaka, H. Ueno, M. Miura-Mattausch, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper demonstrates that ballistic carriers change inversion-charge partitioning between source and drain during switch-off of MOSFET with sub-100nm channel length. We calculated transient current responses by using Monte Carlo simulation and estimated contribution of ballistic carriers to switching charcteristics. The ratio of carriers flow to drain in 40nm MOSFET is larger than that in conventional one because the ration of ballistic carriers increase with decreasing of channel length. This will result in more impact on switching-time than expected from channel length reduction. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ballistic transport / sub-100nm MOSFET / charge partitioning / carrier pinning |
| Paper # | VLD2000-65,SDM2000-138 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2000/9/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Changed Charge Partitioning for sub-100nm MOSFET due to Ballistic Transport |
| Sub Title (in English) | |
| Keyword(1) | ballistic transport |
| Keyword(2) | sub-100nm MOSFET |
| Keyword(3) | charge partitioning |
| Keyword(4) | carrier pinning |
| 1st Author's Name | T. Okagaki |
| 1st Author's Affiliation | Graduate School of Advanced Science of Matter, Hiroshima University() |
| 2nd Author's Name | M. Tanaka |
| 2nd Author's Affiliation | Graduate School of Advanced Science of Matter, Hiroshima University |
| 3rd Author's Name | H. Ueno |
| 3rd Author's Affiliation | Graduate School of Advanced Science of Matter, Hiroshima University |
| 4th Author's Name | M. Miura-Mattausch |
| 4th Author's Affiliation | Graduate School of Advanced Science of Matter, Hiroshima University |
| Date | 2000/9/15 |
| Paper # | VLD2000-65,SDM2000-138 |
| Volume (vol) | vol.100 |
| Number (no) | 296 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |