Presentation | 2000/9/15 Design Guideline and Performance Prediction of 'SBB' SOI MOSFETs Shichio Funakoshi, Mamoru Terauchi, Kazuo Terada, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | 'Self-Body-Biased' ('SBB')SOI MOSFETs, in which the body bias is automatically controlled by the gate bias and the drain current, have been studied in detail. Static simulations show that the desired ratio of the off-state leakage current(Ioff)to the on-state current-drivability(Ion)can be achieved by independently changing the impurity concentration of the 'high Na' and the 'low Na' regions of 'SBB' SOI MOSFETs. Transient simulations show that the propagation delay(〓_pd)of an 'SBB'CMOS inverter is up to 30% shorter than that for a bulk CMOS inverter at supply voltage of 0.9 volt under a relatively heavy load condition(Wn/Wp=1μm/2μm, Lg=0.25μm, C_1.=1pF). |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SOI structure / Depletion Isolation Effect / impact ionization / DTMOS |
Paper # | VLD2000-60,SDM2000-133 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2000/9/15(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Design Guideline and Performance Prediction of 'SBB' SOI MOSFETs |
Sub Title (in English) | |
Keyword(1) | SOI structure |
Keyword(2) | Depletion Isolation Effect |
Keyword(3) | impact ionization |
Keyword(4) | DTMOS |
1st Author's Name | Shichio Funakoshi |
1st Author's Affiliation | Dept.of Computer Engineering, Fac.of Information Sciences, Hiroshima City University() |
2nd Author's Name | Mamoru Terauchi |
2nd Author's Affiliation | Dept.of Computer Engineering, Fac.of Information Sciences, Hiroshima City University |
3rd Author's Name | Kazuo Terada |
3rd Author's Affiliation | Dept.of Computer Engineering, Fac.of Information Sciences, Hiroshima City University |
Date | 2000/9/15 |
Paper # | VLD2000-60,SDM2000-133 |
Volume (vol) | vol.100 |
Number (no) | 296 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |