Presentation 2000/9/15
Design Guideline and Performance Prediction of 'SBB' SOI MOSFETs
Shichio Funakoshi, Mamoru Terauchi, Kazuo Terada,
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Abstract(in English) 'Self-Body-Biased' ('SBB')SOI MOSFETs, in which the body bias is automatically controlled by the gate bias and the drain current, have been studied in detail. Static simulations show that the desired ratio of the off-state leakage current(Ioff)to the on-state current-drivability(Ion)can be achieved by independently changing the impurity concentration of the 'high Na' and the 'low Na' regions of 'SBB' SOI MOSFETs. Transient simulations show that the propagation delay(〓_pd)of an 'SBB'CMOS inverter is up to 30% shorter than that for a bulk CMOS inverter at supply voltage of 0.9 volt under a relatively heavy load condition(Wn/Wp=1μm/2μm, Lg=0.25μm, C_1.=1pF).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI structure / Depletion Isolation Effect / impact ionization / DTMOS
Paper # VLD2000-60,SDM2000-133
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Committee SDM
Conference Date 2000/9/15(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design Guideline and Performance Prediction of 'SBB' SOI MOSFETs
Sub Title (in English)
Keyword(1) SOI structure
Keyword(2) Depletion Isolation Effect
Keyword(3) impact ionization
Keyword(4) DTMOS
1st Author's Name Shichio Funakoshi
1st Author's Affiliation Dept.of Computer Engineering, Fac.of Information Sciences, Hiroshima City University()
2nd Author's Name Mamoru Terauchi
2nd Author's Affiliation Dept.of Computer Engineering, Fac.of Information Sciences, Hiroshima City University
3rd Author's Name Kazuo Terada
3rd Author's Affiliation Dept.of Computer Engineering, Fac.of Information Sciences, Hiroshima City University
Date 2000/9/15
Paper # VLD2000-60,SDM2000-133
Volume (vol) vol.100
Number (no) 296
Page pp.pp.-
#Pages 7
Date of Issue