| Presentation | 2000/5/12 Growth of InGaSb under Reduced Gravity using an Airplane and 1G conditions T. Nakamura, Y. Hayakawa, K. Balakrishnan, N. Shibata, H. Komatsu, N. Murakami, T. Yamada, D. Krishnamurthy, T. Koyama, M. Miyazawa, M. Kumagawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recrystallization studies were done at a reduced gravity level of 10^<-2>G for 20 seconds using an airplane and at normal gravity conditions on earth. After the heating and cooling processes, samples were analyzed by EPMA. The obtained results are:(1)there were large needle crystals in the 10^<-2>G-processed sample;(2)there were many small needle crystals in the 1G-processed sample, because the convection under 10^<-2> condition is different from that under 1G condition. These results show that it is possible to grow large InGaSb single crystals under the reduced gravity condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Airplane / Microgravity / InGaSb / Growth / Needle crystal |
| Paper # | ED2000-42,CPM2000-27,SDM2000-42 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2000/5/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of InGaSb under Reduced Gravity using an Airplane and 1G conditions |
| Sub Title (in English) | |
| Keyword(1) | Airplane |
| Keyword(2) | Microgravity |
| Keyword(3) | InGaSb |
| Keyword(4) | Growth |
| Keyword(5) | Needle crystal |
| 1st Author's Name | T. Nakamura |
| 1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
| 2nd Author's Name | Y. Hayakawa |
| 2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 3rd Author's Name | K. Balakrishnan |
| 3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 4th Author's Name | N. Shibata |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | H. Komatsu |
| 5th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 6th Author's Name | N. Murakami |
| 6th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 7th Author's Name | T. Yamada |
| 7th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 8th Author's Name | D. Krishnamurthy |
| 8th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 9th Author's Name | T. Koyama |
| 9th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 10th Author's Name | M. Miyazawa |
| 10th Author's Affiliation | Shizuoka Univ.Faculty of Eng. |
| 11th Author's Name | M. Kumagawa |
| 11th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| Date | 2000/5/12 |
| Paper # | ED2000-42,CPM2000-27,SDM2000-42 |
| Volume (vol) | vol.100 |
| Number (no) | 62 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |