| Presentation | 2000/5/12 Conductivity type control of ZnO Nuttawuth Buthrath, Arun Vir Singh, Yoshihito Hiroe, Akihiro Wakahara, Akira Yoshida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this research, we deposited ZnO thin films by sputter method using ZnO target doped with N and Ga. In this experiment area ratio of ZnO target and GaN pieces was 9:1. We obtained p-type Zinc Oxide thin film. Resistivity, carrier concentration and mobility were 37.6[Ωcm], 9×10^<15>[cm^<-3>]and 18.5[cm^2/V・s], respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Transparent conducting ZnO / Sputter |
| Paper # | ED2000-30,CPM2000-15,SDM2000-30 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2000/5/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Conductivity type control of ZnO |
| Sub Title (in English) | |
| Keyword(1) | Transparent conducting ZnO |
| Keyword(2) | Sputter |
| 1st Author's Name | Nuttawuth Buthrath |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | Arun Vir Singh |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Yoshihito Hiroe |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | Akihiro Wakahara |
| 4th Author's Affiliation | Toyohashi University of Technology |
| 5th Author's Name | Akira Yoshida |
| 5th Author's Affiliation | Toyohashi University of Technology |
| Date | 2000/5/12 |
| Paper # | ED2000-30,CPM2000-15,SDM2000-30 |
| Volume (vol) | vol.100 |
| Number (no) | 62 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |