Presentation 2000/6/21
ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
Bong-Hoon Lee, Moon-Young Jeong, Yoon-Ha Jeong,
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Abstract(in English) We present a simulation of a novel single electron transistor (SET) on silicon-on-insulator (SOI) substrate, having a single gate. The proposed structure is identical to the lightly doped drain (LDD) MOSFETs, with the exception of no-doped LDD region. By applying a gate voltage, a Coulomb island is formed under the gate and the region beneath the sidewall spacer acts as a tunnel barrier. Considering tunnel resistances and barrier heights, we optimized the channel doping concentration and length of sidewall spacer at 3×10^<18> / cm^3, 15nm respectively. Simulation results show that the total capacitance of the SET is about 1.732aF, with the gate length of 10nm. Because of its simple structure, it is suitable for fabricating integrated circuits.
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Keyword(in English) SET / Coulomb oscillation / Coulomb blockade / LDD MOSFET
Paper # ED2000-59,SDM2000-59
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Committee SDM
Conference Date 2000/6/21(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) ED2000-59 / SDM2000-59 Calculation of Electrical Transport Properties for Novel Single Gated Single Electron Transistors
Sub Title (in English)
Keyword(1) SET
Keyword(2) Coulomb oscillation
Keyword(3) Coulomb blockade
Keyword(4) LDD MOSFET
1st Author's Name Bong-Hoon Lee
1st Author's Affiliation Department of Electrical and Electronic Engineering Pohang University of Science and Technology()
2nd Author's Name Moon-Young Jeong
2nd Author's Affiliation Department of Electrical and Electronic Engineering Pohang University of Science and Technology
3rd Author's Name Yoon-Ha Jeong
3rd Author's Affiliation Department of Electrical and Electronic Engineering Pohang University of Science and Technology
Date 2000/6/21
Paper # ED2000-59,SDM2000-59
Volume (vol) vol.100
Number (no) 150
Page pp.pp.-
#Pages 5
Date of Issue