| Presentation | 2000/6/21 ED2000-56 / SDM2000-56 Room Temperature Negative Differential Resistance of CdF_2-CaF_2 Resonant Tunneling Diode on Si(111) Masahiro Watanbe, Toshiyuki Funayama, Taishi Teraji, Naoto Sakamaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | CdF_2-CaF_2 heterostructures are attractive materials for quantum devices on silicon substrate because of large conduction band discontinuity of 2.9eV at the heterointerface. We have demonstrated room temperature negative differential resistance of double barrier resonant tunneling diode (DBRTD) structures and peak to valley current ratio (PVR) of more than 10^5 has been achieved using CaF_2 grown by molecular beam epitaxy combined with partially ionized beam technique on Si(111) 0.07° misscut substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Resonant tunneling diode / Silicon / CaF_2 / CdF_2 / Heterostructure / Peak to valley ratio |
| Paper # | ED2000-56,SDM2000-56 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2000/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ED2000-56 / SDM2000-56 Room Temperature Negative Differential Resistance of CdF_2-CaF_2 Resonant Tunneling Diode on Si(111) |
| Sub Title (in English) | |
| Keyword(1) | Resonant tunneling diode |
| Keyword(2) | Silicon |
| Keyword(3) | CaF_2 |
| Keyword(4) | CdF_2 |
| Keyword(5) | Heterostructure |
| Keyword(6) | Peak to valley ratio |
| 1st Author's Name | Masahiro Watanbe |
| 1st Author's Affiliation | Tokyo Institute of Technology() |
| 2nd Author's Name | Toshiyuki Funayama |
| 2nd Author's Affiliation | Tokyo Institute of Technology |
| 3rd Author's Name | Taishi Teraji |
| 3rd Author's Affiliation | Tokyo Institute of Technology |
| 4th Author's Name | Naoto Sakamaki |
| 4th Author's Affiliation | Tokyo Institute of Technology |
| Date | 2000/6/21 |
| Paper # | ED2000-56,SDM2000-56 |
| Volume (vol) | vol.100 |
| Number (no) | 150 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |