| Presentation | 2000/4/13 Low-temperature preparation of poly-Si films by catalytic CVD and application to TFTs Atsushi Masuda, Akira Izumi, Hideki Matsumura, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD, is one of the promising candidates for large-area thin-film formation method at low temperatures. Recently, Cat-CVD is widely studied in order to apply to device-fabrication process in semiconductor industry. Polycrystalline silicon (poly-Si) films prepared by Cat-CVD are expected to be applied to thin-film transistors (TFTS). In 1991 the authors succeeded in preparing poly-Si films by this method for the first time. Until 1998 they systematically studied preparation of poly-Si films by Cat-CVD and application to TFTs under the R&D Projects in Cooperation with Academic Institutions "Cat-CVD Fabrication Processes for Semiconductor Devices" from the New Energy and Industrial Technology Development Organization (NEDO). In this paper various structural and electrical properties of poly-Si films prepared by Cat-CVD at low temperatures are presented. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | catalytic chemical vapor deposition (Cat-CVD) / hot-wire CVD / polycrystalline silicon (poly-Si) / thin-film transistor (TFT) / structural properties / electrical properties |
| Paper # | ED2000-3,SDM2000-3 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2000/4/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-temperature preparation of poly-Si films by catalytic CVD and application to TFTs |
| Sub Title (in English) | |
| Keyword(1) | catalytic chemical vapor deposition (Cat-CVD) |
| Keyword(2) | hot-wire CVD |
| Keyword(3) | polycrystalline silicon (poly-Si) |
| Keyword(4) | thin-film transistor (TFT) |
| Keyword(5) | structural properties |
| Keyword(6) | electrical properties |
| 1st Author's Name | Atsushi Masuda |
| 1st Author's Affiliation | Japan Advanced Institute of Science and Technology (JAIST)() |
| 2nd Author's Name | Akira Izumi |
| 2nd Author's Affiliation | Japan Advanced Institute of Science and Technology (JAIST) |
| 3rd Author's Name | Hideki Matsumura |
| 3rd Author's Affiliation | Japan Advanced Institute of Science and Technology (JAIST) |
| Date | 2000/4/13 |
| Paper # | ED2000-3,SDM2000-3 |
| Volume (vol) | vol.100 |
| Number (no) | 3 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |