Presentation 2000/3/9
Preparation and Properties of Bi_2SiO_5/Si Structures
Kouji Hiraki, Masaki Yamaguchi, Takao Nagatomo, Yoichiro Masuda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Bismuth silicate (Bi_2SiO_5) films, expected as the buffer layer between the Bismuth Layer-Structured Ferroelectrics (BLSF) and silicon substrate, were prepared n (100)-oriented silicon wafers by rf magnetron sputtering and metal-organic deposition methods. The c-axis-oriented Bi_2SiO_5 films obtained both deposition techniques. The carbon atoms were exists approximately 1-2 atom.% in the films by metal-organic deposition. On the other hand, the sputtered films were not include the carbon atoms, and have lower leakage current density of approximately 10~<11> A cm~2 and the interface trap density of 6x10~<12> cm~<-2> eV~<-1>.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Bismuth silicate / sputtering method / metal-organic deposition method / bismuth silicate/silicon structures / thin films
Paper # ED99-327,SDM99-220
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Conference Information
Committee SDM
Conference Date 2000/3/9(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation and Properties of Bi_2SiO_5/Si Structures
Sub Title (in English)
Keyword(1) Bismuth silicate
Keyword(2) sputtering method
Keyword(3) metal-organic deposition method
Keyword(4) bismuth silicate/silicon structures
Keyword(5) thin films
1st Author's Name Kouji Hiraki
1st Author's Affiliation Department of Electrical Engineering, Shibaura Institute of Technology()
2nd Author's Name Masaki Yamaguchi
2nd Author's Affiliation Department of Electrical Engineering, Shibaura Institute of Technology : Research Organization for Advanced Engineering, Shibaura Institute of Technology
3rd Author's Name Takao Nagatomo
3rd Author's Affiliation Department of Electrical Engineering, Shibaura Institute of Technology : Research Organization for Advanced Engineering, Shibaura Institute of Technology /
4th Author's Name Yoichiro Masuda
4th Author's Affiliation
Date 2000/3/9
Paper # ED99-327,SDM99-220
Volume (vol) vol.99
Number (no) 673
Page pp.pp.-
#Pages 6
Date of Issue