Presentation	2000/3/8 The Development and Application of PZT Thin Films for Memories Takashi Nakamura,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	Ferroelectric memories have attracted much attention as these high-speed nonvolatile memories can replace for the most part of conventional semiconductor memories. The ferroelectric memories of up to 256kbit density using PZT(Pb(Zr, Ti)O_3) as a ferroelectric material has been already fabricated, and it is estimated that the market of these will spread. However, there are some problems to spread the market. In this paper, the fabrication technique of STC capacitors for highly integrated memories and low temperature are discussed. And we also discuss about the technology of low temperature crystallization and low voltage operation for ferroelectric memory embedded system LSIs.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Ferroelectric Memory / PZT thin film / Sol-Gel method / STC structure / Low voltage operation
Paper #	ED99-325,SDM99-218
Date of Issue

Conference Information
Committee	SDM
Conference Date	2000/3/8(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	The Development and Application of PZT Thin Films for Memories
Sub Title (in English)
Keyword(1)	Ferroelectric Memory
Keyword(2)	PZT thin film
Keyword(3)	Sol-Gel method
Keyword(4)	STC structure
Keyword(5)	Low voltage operation
1st Author's Name	Takashi Nakamura
1st Author's Affiliation	Device Technology Div., Semiconductor R&D Headquarters, ROHM CO., LTD.()
Date	2000/3/8
Paper #	ED99-325,SDM99-218
Volume (vol)	vol.99
Number (no)	672
Page	pp.pp.-
#Pages	6
Date of Issue