Presentation 1999/11/19
1transistor/1capacitor, GAIN cell type Chain FRAM
S. Watanabe, D. Takashima, S. Shuto, I. Kunishima, H. Takenaka, Y. Oowaki, S. Tanaka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Chain FRAM / FRAM / access time / nonvolatile / GAIN cell
Paper # SDM99-162
Date of Issue

Conference Information
Committee SDM
Conference Date 1999/11/19(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1transistor/1capacitor, GAIN cell type Chain FRAM
Sub Title (in English)
Keyword(1) Chain FRAM
Keyword(2) FRAM
Keyword(3) access time
Keyword(4) nonvolatile
Keyword(5) GAIN cell
1st Author's Name S. Watanabe
1st Author's Affiliation Technology Planning Division, Toshiba Corporation()
2nd Author's Name D. Takashima
2nd Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation
3rd Author's Name S. Shuto
3rd Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation
4th Author's Name I. Kunishima
4th Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation
5th Author's Name H. Takenaka
5th Author's Affiliation Toshiba Microelectronics Corporation
6th Author's Name Y. Oowaki
6th Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation
7th Author's Name S. Tanaka
7th Author's Affiliation Microelectronics Engineering Laboratory, Toshiba Corporation
Date 1999/11/19
Paper # SDM99-162
Volume (vol) vol.99
Number (no) 457
Page pp.pp.-
#Pages 6
Date of Issue